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Study on Growth and Spectra Properties of Nd: GGG Crystal Liu Jinghe1,Sun Jing1,Zhang Ying1,Zeng Fanming1 (1.School of Materials Science, Changchun University of Science and Technology, Changchun 130022, China) Abstract:The laser crystal Nd: GGG was grown by Cz method. The optimum processing parameter is that the pulling rate is 2~4mm·h-1, the rotation rate is 20~40 r·min-1 and the cooling......
Comparison of measurements and simulation results in 300mm CZ silicon crystal growthGAO Yu, TU Hailing, ZHOU Qigang, DAI Xiaolin, and XIAO Qinghua General Research Institute of Non-ferrous Metals... Systems and Devices Technology in Erlangen of Germany, was used for numerical analysis of growth interface situation. The heat transportation, argon flow and melt convection have been considered. Cauchy’s......
Cz法晶体生长中的流动与传热何评,俞昌铭北京科技大学热能系摘 要:本文针对Cz法晶体生长特点,通过数值模拟的方法,对Cz法生长砷化镓单晶时从引晶,放肩,等径至收尾这一完整工艺过程中晶体的温度场,熔体的温度场和速度场进行了计算,从中分析籽晶和坩埚的转向,转速等因素对流动和传热的影响,并与实际的砷化镓单晶生长过程进行比较,从比较结果看,二者基本吻合.关键词:晶体生长;数值模拟;传热;Cz法;......
混合剂CZ在中国炭浆厂的助浸工艺迟呈海吉林省冶金研究院选矿研究所摘 要:某炭浆厂处理量为250t/d,通过采用混合剂CZ助浸工艺,取得了较好的经济技术指标.金的浸出率由71.63%提高到95.07%,同时,氰化钠耗量由2.00kg/t矿降低到1.15kg/t矿,混合剂CZ耗量为0.20kg/ti.每年可为矿山降低药剂成本80万元以上,多增产黄金拆合人民币400多万元.生产实践证明,混合剂CZ助浸工艺是提高金的浸出率,降低生产成本的有效途径.关键词:混合剂CZ;浸出率;生产成本;......
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真空CZ法生长硅单晶碳沾污机理的研究樊占国,梁连科东北工学院冶金物化教研室东北工学院特冶教研室摘 要:在真空下用CZ法生长硅单晶时,经热力学分折和实验研究证明,硅单晶中碳的主要来源除石墨托与石英坩埚间的反应生成CO外,气氛中氧化组元(O2,SiO等)亦与石墨器件反应生成CO.碳以CO形式进入融硅,使硅单晶中碳含量增加.本研究采用了对石墨器件表面涂SiC,Mo,ZrO2和热解石墨等方法,并用石英保温筒代替石墨保温筒.在真空度为1~3×10-2托下,投料300g,用CZ法生长硅单晶,其晶体尾部的碳量平均值,比原工艺晶体中碳的平均含量降低了45%.关键词:......
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The Technology and Properties of Digital Double Pulse Electrodepositing Ni-HA Composite Coating of Bioceramics JIN Zhong-hong1,SHI Gu-guizhi2,DONG He-yan3,LI Yan1,WANG Zhou4,CHEN Wei-rong4,FU... and analyses the technology, the surface image, microstructure and ability of digital double pulse electrodepositing Ni-HA composite coatings of bioceramics made on 1Crl8Ni9Ti substrate by SEM ,XRD and so......
Simulation aided hot zone design for faster growth of CZ silicon mono crystalsCAO Jianwei a,GAO Yu b,CHEN Ying a,ZHANG Guohu b,and QIU Minxiu a a The State Key Laboratory of Fluid Power Transmission... for optimizing a hot zone for Czochralski (CZ) silicon crystal growth.The heater structure and heat shield material were investigated.With this optimized hot zone,the temperature gradient near the crystal/melt......
制备方法对铈锆铝复合氧化物还原热处理性能的影响杨黄根1,晏全1,韦庆敏1,陈渊1,朱立刚1,覃利琴1,肖益鸿21. 玉林师范学院广西农产资源化学与生物技术重点实验室2. 福州大学化肥催化剂国家工程研究中心摘 要:采用沉淀前驱物混合法制备铈锆铝复合氧化物(CZ+A(pm))和沉淀机械研磨混合法制备铈锆铝复合氧化物(CZ+A(mm))(x(Ce)∶x(Zr)∶x(Al)=1∶1∶2).将样品分别在空气和10%H2/Ar气氛下进行热处理,利用X射线粉末衍射(XRD),N2吸脱附(BET),O2脉冲吸附,H2程序升温还原(H2-TPR)等手段研究了复合氧化物的结构及性能.结果表明,CZ+A(pm),CZ+A(mm)新鲜样品经1 100℃还原热处理后的CZ+A(pm)-H2-1 100样品的XRD图谱出现较多且......