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films were annealed at 350, 450 and 570℃respectively for 1h. After annealing at 570℃, the anisotropic magnetoresistance ratio(RAM) of the films is greatly improved. It increases to 3%-3.5% nearly... film; annealing; internal stress; anisotropic magnetoresistance CLC number: O484.4
Document code: A
Anisotropic Magnetoresistance of Perovskite La2/3 Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3 Trilayer Films
Wu Cheng1,Zhang Li1,Zhao Kun1
(1.Magnetoelectronics Laboratory, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252059, China)
Abstract:The anisotropic magnetoresistance (MR) of La2/3Ca1/3MnO3 (LCMO)/YBa2Cu4O8 (YBCO) /LCMO sandwiches on (001) SrTiO3 were......Anisotropic Magnetoresistance of Perovskite La2/3 Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3 Trilayer Films
来源: 《JOURNAL OF RARE EARTHS2005年第2期》——Wu Cheng Zhang Li Zhao Kun
Research progress in anisotropic magnetoresistanceChong-Jun Zhao1,Lei Ding2,Jia-Shun HuangFu1,Jing-Yan Zhang1,Guang-Hua Yu11. Department of Materials Physics and Chemistry, University of Science and Technology Beijing2. School of Materials and Chemical Engineering, Hainan University摘 要:Anisotropic magnetoresistance (AMR) is an important physical......
Peculiarity of magnetoresistance of discontinuous ferromagnetic thin filmsYu.O.Shkurdoda,I.M.Pazukha,A.M.ChornousDepartment of Applied Physics,Sumy State University摘 要:magnetoresistance(MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films......
SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlOx/Fe-O FILMS S.Luo1,P.Wu1,L.Q.Pan1,Y.Tian1,H.Qiu1,F.P.Wang1 (1.Beijing Keda-Tianyu Microelectronic Materials Technology Development Co. Ltd... structrure of α-Fe is observed in both electrodes. Largetunnel magnetoresistance in large Fe-O/AlOx/Fe-O junctions of 1cm2 is observed atroom temperature and the Ⅰ-Ⅴ characteristic curve of the junction......
, the significant improvement on anisotropic magnetoresistance occurs at the annealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃, the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For films deposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃ annealing. The atomic force microscopy (AFM......
Anisotropic fourth-order diffusion regularization for multiframe super-resolution reconstructionHUANG Shu-ying(黄淑英)1, 2, YANG Yong(杨勇)3, WANG Guo-yu(王国宇)1(1. College of Information Science... good tradeoff between noise removal and edge preservation. The method is developed by using L1 norm as data fidelity term and anisotropic fourth-order diffusion model as a regularization item......
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