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Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering WANG Jin-zhong(王金忠)1, 2, E. ElANGOVAN2, N. FRANCO3, A. ALVESE3, A. REGO4, R... frequency (RF) sputtered on glass substrates and studied as a function of oxygen partial pressure (OPP) ranging from 3.0?10-4 to 9.5?10-3 Pa. X-ray diffraction patters confirmed the polycrystalline......
Effect of partial pressure of reactive gas on chromium nitride and chromium oxide deposited by arc ion plating LI Ming-sheng(李明升)1, 2, FENG Chang-jie(冯长杰)2, WANG Fu-hui(王福会)2 1. Jiangxi Key... Academy of Sciences, Shenyang 110016, China Received 10 April 2006; accepted 25 April 2006 Abstract: The effects of reactive gas partial pressure on droplet formation, deposition rate and change......
THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP) C.Sun1,M.S.Li1,S.L.Zhu1,L.S.Wen1,Fuhui WANG1 (1.Institute of Metal Research, The Chinese Academy... parameters such ascompositions of target materials, N2 partial pressure, substrate bias and so on. ln thisstudy, several titanium aluminum nitride films were deposited on 1Cr11Ni2 W2Mo Vsteel......
Effect of cerium addition on oxidation behavior of 25Cr20Ni alloy under low oxygen partial pressure邵明增,崔立山,郑雁军,邢琳琳Departments of Materials Science and Engineering, China University of Petroleum摘 要:The influence of Ce addition on the oxidation behavior of 25Cr20Ni alloy at 950 oC under low oxygen partial pressure was inves-tigated. The oxidized samples......
Effect of cerium addition on oxidation behavior of 25Cr20Ni alloy under low oxygen partial pressure邵明增,崔立山,郑雁军,邢琳琳Departments of Materials Science and Engineering, China University of Petroleum摘 要:The influence of Ce addition on the oxidation behavior of 25Cr20Ni alloy at 950 oC under low oxygen partial pressure was inves-tigated. The oxidized samples......
Effect of CO2 partial pressure on SCC behavior of welded X80 pipeline in simulated soil solutionMing WU,Xu CHEN*,Chuan HE and Jun XIAO College of Petroleum Engineering,Liaoning Shihua University... with the increase of CO2 partial pressure.The SCC mechanism of X80 pipeline is a mixing mechanism of hydrogen embrittlement combined with anodic dissolution,and the hydrogen embrittlement plays a leading role.The......
phosphorus concentration, while gas species P will be dominated in its vapour at low phosphorus content. Key words: phosphorus concentration; molten silicon; equilibrium partial pressure; temperature; chamber... silicon-phosphorus alloy in a controlled phosphorus partial pressure and is expressed as follows: ......
Effect of Oxygen Partial Pressure on Epitaxial Growth and Properties of Laser-Ablated AZO Thin Films王传彬1,2,LUO Sijun1,SHEN Qiang1,张联盟11. State Key Lab of Advanced Technology for Materials Synthesis... films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures(PO2).The effect of PO2 on the crystal structure,preferred orientation as well as the electrical......
temperature 150 ℃, oxygen partial pressure 1 MPa, additive amount 1%, solid-to-liquid ratio 1:4, leaching time 2 h, initial sulfuric acid concentration 15%, and particle size...-reacted and generated S, ZnSO4, H2O, etc. In the absence of oxygen, the partial pressure of H2S formed slows down the kinetics of the leaching reaction. The addition of oxygen in the system reduces......
ITO Films Prepared by Long-throw Magnetron Sputtering without Oxygen Partial PressureMiaoju Chuang Institute of Mechatronoptic Systems,Chienkuo Technology University,Changhua City 500,Taiwan,China摘 要:This study has investigated the influence of the radio frequency (rf) power and working pressure on the properties of indium tin oxide (ITO) thin films......
