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. Key words: epitaxial growth film; atomic misfit; dislocation; interface energy CLC number: O484.1 Document code: A interface. The concept of a limiting misfit as the upper limit of misfit below which epitaxial growth......
with the theoretical calculation results, the microstructures at different growth rates were analyzed. Based on the solid/liquid interface morphologies, the critical growth rates for the interface... at different growth rates. Hence, the temperature gradient of liquid is taken as 104K/m during the theoretical analysis. 3.2 DS microstructures and solid/liquid interface morphologies......
and their corresponding morphologies was studied. It is put forward that the growth interface of crystal will be concave when negative plane is used as growth interface. Concave growth interface...Polar Growth Habit of KABO Crystal Zhang Xuehua1,Luo Haosu1,Zhong Weizhuo1 (1.Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China) Abstract:The polar growth habit......
Effect of interface recombination on magnetoelectric coupling in CoFe2O4-BaTiO3 composites NIE Jun-wu(聂军武), XU Guo-yue(徐国跃), QI Xian-jin(祁先进) College of Material Science and Technology, Nanjing... is attributed to the better interface sintered by using those nano-particles with the two phases and a correct poling strategy on the sample. But the interface between the phases has gone through......
Growth and interface of amorphous La2Hf2O7/Si thin film程学瑞1,戚泽明2,张焕君1,张国斌2,潘国强21. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation... vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth......
Growth and interface of amorphous La2Hf2O7/Si thin film程学瑞1,戚泽明2,张焕君1,张国斌2,潘国强21. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation... vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth......
DIAMOND HETEROEPITAXY-NUCLEATION, INTERFACE STRUCTURE, FILM GROWTH X.Jiang1,W Jager2 (1.Fraunhofer-Institute for Surface Engineering and Thin Films,D-38108 Braunschweig,Germany;2.Faculty... substrate materials is briefly re vi(wed.First the early stages of diamond nucleation and the diamond film growth as wellas influences of various deposition conditions are described. Then the results......
Influence of Thermal Conductivity on Interface Shape during Growth of Sapphire Crystal Using a Heat-Exchanger-Method Lu Chungwei1,Chen Jyh Chen2 (1.Department of Information Management, Jen-Teh... contributed on heat transfer will enhance the heat transport inside the crystalline phase during growth the transparent sapphire crystal using a heat-exchanger-method (HEM). The artificially enhanced thermal......
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