Modeling of gas phase diffusion transport during chemical vapor infiltration process
来源期刊：中国有色金属学报(英文版)2002年第3期
论文作者：肖鹏 李娣 徐永东 黄伯云
文章页码：429 - 432
Key words：Chemical vapor infiltration; modeling; diffusion transport; composites
Abstract: In order to improve the uniformity of both the concentration of gaseous reagent and the deposition of matrix within micro-pores during the chemical vapor infiltration (CVI) process, a calculation modeling of gas phase diffusion transport within micro-pores was established. Taken CH3SiCl3 as precursor for depositing SiC as example, the diffusion coefficient, decomposing reaction rate, concentration within the reactor, and concentration distributing profiling of MTS within micro-pore were accounted, respectively. The results indicate that, increasing the ratio of diffusion coefficient to decomposition rate constant of precursor MTS is propitious to decrease the densification gradient of parts, and decreasing the aspect ratio (L/D) of micro-pore is favorable to make the concentration uniform within pores.
