[0001]-Oriented InN Nanoleaves and Nanowires: Synthesis,Growth Mechanism and Optical Properties
来源期刊：Acta Metallurgica Sinica2016年第9期
论文作者：Min Liu Hui-Qiang Liu Sheng Chu Ru-Fang Peng Shi-Jin Chu
文章页码：820 - 826
摘 要：Novel indium nitride（In N）leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method.The characterization results indicate that the samples are single-crystalline,and the growth direction of the nanowires and nanoleaves is[0001].The growth mechanism of the In N nanoleaves is following the pattern of vapor–liquid–solid process with a three-step growth process.In addition,the room temperature photoluminescence spectra of two nanostructures show band-to-band emissions around 0.706 e V,where the emission from single nanoleaf is stronger than nanowire,showing potential for applications in optoelectronic devices.
Min Liu1，Hui-Qiang Liu2，Sheng Chu2，Ru-Fang Peng1，Shi-Jin Chu1
1. State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology2. State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University
摘 要：Novel indium nitride（In N）leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method.The characterization results indicate that the samples are single-crystalline,and the growth direction of the nanowires and nanoleaves is[0001].The growth mechanism of the In N nanoleaves is following the pattern of vapor–liquid–solid process with a three-step growth process.In addition,the room temperature photoluminescence spectra of two nanostructures show band-to-band emissions around 0.706 e V,where the emission from single nanoleaf is stronger than nanowire,showing potential for applications in optoelectronic devices.
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