Determination of Substitutional Carbon in SI-GaAs Thin Wafers by Infrared Microscope
来源期刊：Rare Metals1993年第4期
论文作者：何秀坤 王琴 汝琼娜 李光平
文章页码：284 - 287
摘 要：<正> Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature for the first time.The experimental results showed that the carbon concentration inGaAs thin wafers can be measured directly with simple treatment.The calculation method of carbon concen-tration is in agreement with that for normal IR spectrum with 0.5 cm-1resolution.The resolution of1 cm-1can be taken in order to obtain a high signal-to-noise（S/N）ratio using 2.34×1016cm-2calibration factor for calculating carbon concentration at room temperature.
摘要：<正> Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature for the first time.The experimental results showed that the carbon concentration inGaAs thin wafers can be measured directly with simple treatment.The calculation method of carbon concen-tration is in agreement with that for normal IR spectrum with 0.5 cm-1resolution.The resolution of1 cm-1can be taken in order to obtain a high signal-to-noise（S/N）ratio using 2.34×1016cm-2calibration factor for calculating carbon concentration at room temperature.
关键词：
