Effects of ratio of hydrogen flow on microstructure of hydrogenated microcrystalline silicon films deposited by magnetron sputtering at 100 °C

来源期刊:中南大学学报(英文版)2019年第10期

论文作者:王军军 王林青 周永涛 刘雪芹

文章页码:2661 - 2667

Key words:hydrogenated microcrystalline silicon films; radio frequency magnetron sputtering; ratio of hydrogen flow; low temperature; microstructure

Abstract: Hydrogenated microcrystalline silicon (μc-Si:H) films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100 °C using a mixture of argon (Ar) and hydrogen (H2) gasses as precursor gas. The effects of the ratio of hydrogen flow (H2/(Ar+H2)%)) on the microstructure were evaluated. Results show that the microstructure, bonding structure, and surface morphology of the μc-Si:H films can be tailored based on the ratio of hydrogen flow. An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%. The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40% to 70%. The surface roughness of thin films increased, and total hydrogen content decreased as the ratio of hydrogen flow increased. All μc-Si:H films have a preferred (111) orientation, independent of the ratio of hydrogen flow. And the μc-Si:H films had a dense structure, which shows their excellent resistance to post-oxidation.

Cite this article as: WANG Lin-qing, ZHOU Yong-tao, WANG Jun-jun, LIU Xue-qin. Effects of ratio of hydrogen flow on microstructure of hydrogenated microcrystalline silicon films deposited by magnetron sputtering at 100 °C [J]. Journal of Central South University, 2019, 26(10): 2661-2667. DOI: https://doi.org/10.1007/s11771-019-4203-7.

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