P-doped Germanium Nanowires with Fanobroadening in Raman Spectrum
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2016年第1期
论文作者：何亮 XIONG Biao ZHOU Peng LUO Wen SONG Peishuai WANG Xukun HAO Zhimeng YANG Xiao NIU Chaojiang TIAN Xiaocong YAN Mengyu 麦立强
文章页码：52 - 57
摘 要：The optimized growth conditions for high density germanium（Ge） nanowires and P-doped Ge nanowires on Si（111） substrate were investigated,the phosphorus（P）-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition（VLS-LPCVD） of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH4 as precursor and PH3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy（SEM）,the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm-1) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm-1,respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃.
何亮，XIONG Biao，ZHOU Peng，LUO Wen，SONG Peishuai，WANG Xukun，HAO Zhimeng，YANG Xiao，NIU Chaojiang，TIAN Xiaocong，YAN Mengyu，麦立强
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology
摘 要：The optimized growth conditions for high density germanium（Ge） nanowires and P-doped Ge nanowires on Si（111） substrate were investigated,the phosphorus（P）-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition（VLS-LPCVD） of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH4 as precursor and PH3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy（SEM）,the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm-1) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm-1,respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃.
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