Electroluminescence Orientation in InGaN/GaN LED on Nano-patterned Sapphire by MOCVD
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2012年第6期
论文作者：谭天亚 TOHNO Mitsuaki MATSUMOTO Masakazu NAOI Yoshiki SAKAI Shiro
文章页码：1137 - 1138
摘 要：A 385 nm InGaN/GaN LED on the sapphire with the nano-pattern was fabricated and its electroluminescence property was investigated in a three-dimensional （3D） space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattern of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-patterned substrate.
谭天亚1，TOHNO Mitsuaki2，MATSUMOTO Masakazu2，NAOI Yoshiki2，SAKAI Shiro2
1. Department of Physics, Liaoning University2. Graduate School of Advanced Technology and Science, Tokushima University
摘 要：A 385 nm InGaN/GaN LED on the sapphire with the nano-pattern was fabricated and its electroluminescence property was investigated in a three-dimensional （3D） space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattern of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-patterned substrate.
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