简介概要

Morphological,Optical and DC Conduction Properties of a-GaSe Semiconductor Nanoparticle Thin Films

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2013年第12期

论文作者:M.A.Majeed Khan

文章页码:1151 - 1155

摘    要:Amorphous gallium selenide(a-GaSe) semiconductor nanoparticle thin films were deposited onto well cleaned glass substrates by inert gas condensation(IGC) technique under a vacuum of 400 106Pa(3 106Torr). The films were characterized by different structural and optical techniques, including X-ray diffraction, field emission scanning electron microscopy(FESEM), field emission transmission electron microscopy(FETEM), UVevisible absorption spectroscopy and IeV measurements. The particle size and size distribution were determined by TEM images which show the presence of spherical particles in the range of 5e50 nm in size. SEM images indicate that the a-GaSe film grown on glass substrate is almost smooth and dense. The optical properties of a-GaSe nanoparticle thin films were determined by optical absorption spectra. The optical bandgap of the film was estimated to be 2.19 eV and the transitions are allowed direct type. The electrical conductivity of the deposited films has been studied as a function of temperature. In the higher temperature range the dominance of thermally activated band conduction was observed; whereas in the low temperature range the hopping conduction in the band tails of localized states was found to be dominated.v

详情信息展示

Morphological,Optical and DC Conduction Properties of a-GaSe Semiconductor Nanoparticle Thin Films

M.A.Majeed Khan2

2. King Abdullah Institute for Nanotechnology,King Saud University

摘 要:Amorphous gallium selenide(a-GaSe) semiconductor nanoparticle thin films were deposited onto well cleaned glass substrates by inert gas condensation(IGC) technique under a vacuum of 400 106Pa(3 106Torr). The films were characterized by different structural and optical techniques, including X-ray diffraction, field emission scanning electron microscopy(FESEM), field emission transmission electron microscopy(FETEM), UVevisible absorption spectroscopy and IeV measurements. The particle size and size distribution were determined by TEM images which show the presence of spherical particles in the range of 5e50 nm in size. SEM images indicate that the a-GaSe film grown on glass substrate is almost smooth and dense. The optical properties of a-GaSe nanoparticle thin films were determined by optical absorption spectra. The optical bandgap of the film was estimated to be 2.19 eV and the transitions are allowed direct type. The electrical conductivity of the deposited films has been studied as a function of temperature. In the higher temperature range the dominance of thermally activated band conduction was observed; whereas in the low temperature range the hopping conduction in the band tails of localized states was found to be dominated.v

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