Growth and interface of amorphous La2Hf2O7/Si thin film
来源期刊：JOURNAL OF RARE EARTHS2012年第2期
论文作者：程学瑞 戚泽明 张焕君 张国斌 潘国强
文章页码：189 - 192
摘 要：Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.
程学瑞1，戚泽明2，张焕君1，张国斌2，潘国强2
1. Department of Technology and Physics, Zhengzhou University of Light Industry2. National Synchrotron Radiation Laboratory, University of Science and Technology of China
摘 要：Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.
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