Characteristics of Cu implantation into Si by PBII using UBMS cathode

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ÎÄÕÂÒ³Â룺173 - 177

Key words£ºunbalanced magnetron sputtering; plasmaª²based ion implantation; recoil implantation

Abstract: The implantation of Cu into Si substrate was carried out by plasmaª²based ion implantation (PBII) using unbalanced magnetron sputtering (UBMS) cathode as the metal plasma source. The different pulse bias ( U_p ) and the distance between the cathode and the samples ( d_s-t ) were chosen to research the characteristics of this method. The results show that the implantation of metal ions can be realized by the metal plasma source of UBMS cathode. The physical process such as the metal ion pure implantation, the gas ion implantation, the recoil implantation of the metal atoms, the deposition of the metal particles and the reª²sputtering of the metal film depend on the energy, dose and deposition rate of the ions ( Cu⁺, Ar⁺ ). The metal plasma based ion implantation of Cu into Si substrate is favored by selecting higher U_p (60 kV) and larger d_s-t (200 mm).