Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET
来源期刊：中南大学学报(英文版)2013年第9期
论文作者：王斌 ZHANG He-ming(张鹤鸣) HU Hui-yong(胡辉勇) ZHANG Yu-ming(张玉明) ZHOU Chun-yu(周春宇) LI Yu-chen(李妤晨)
文章页码：2366 - 2371
Key words：strained-Si/SiGe; pMOSFET; gate C-V characteristics; plateau; doping concentration; strained-Si layer thickness; mass fraction of Ge
Abstract: A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET. Experimental results were used to validate this model. The extracted parameters from our model were tOX=20 nm, ND=1×1016 cm-3, tSSi=13.2 nm, consistent with the experimental values. The results show that the simulation results agree with experimental data well. It is found that the plateau can be strongly affected by doping concentration, strained-Si layer thickness and mass fraction of Ge in the SiGe layer. The model has been implemented in the software for strained silicon MOSFET parameter extraction, and has great value in the design of the strained-Si/SiGe devices.
WANG Bin(王斌), ZHANG He-ming(张鹤鸣), HU Hui-yong(胡辉勇), ZHANG Yu-ming(张玉明), ZHOU Chun-yu(周春宇), LI Yu-chen(李妤晨)
(Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices (School of Microelectronics,
Xidian University), Xi’an 710071, China)
Abstract:A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET. Experimental results were used to validate this model. The extracted parameters from our model were tOX=20 nm, ND=1×1016 cm-3, tSSi=13.2 nm, consistent with the experimental values. The results show that the simulation results agree with experimental data well. It is found that the plateau can be strongly affected by doping concentration, strained-Si layer thickness and mass fraction of Ge in the SiGe layer. The model has been implemented in the software for strained silicon MOSFET parameter extraction, and has great value in the design of the strained-Si/SiGe devices.
Key words:strained-Si/SiGe; pMOSFET; gate C-V characteristics; plateau; doping concentration; strained-Si layer thickness; mass fraction of Ge
