Study of Carbon Contaminated Epitaxial Silicon
来源期刊：Rare Metals1989年第4期
论文作者：Li Yuzhen Sun Jiguang General Research Institute for Non-ferrous Metals,BeijingLiu Mingdeng Quan Baofu Jilin University
文章页码：64 - 66
摘 要：<正> The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10Auger electron microprobe and JEM-2000FX transmission scanning electron microscope.The results show that the fog defectson the surface are due to carbon contamination.The existence of SiC in the silicon epitaxial layer has been identified by the elec-tron diffraction analysis.
摘要：<正> The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10Auger electron microprobe and JEM-2000FX transmission scanning electron microscope.The results show that the fog defectson the surface are due to carbon contamination.The existence of SiC in the silicon epitaxial layer has been identified by the elec-tron diffraction analysis.
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