Band gap and structure characterization of Tm2O3 films
来源期刊：JOURNAL OF RARE EARTHS2012年第3期
论文作者：汪建军 冀婷 朱燕艳 方泽波 任维义
文章页码：233 - 235
摘 要：Single crystalline Tm2O3 films were grown on Si （001） substrates by molecular beam epitaxy using metallic Tm source and atomic oxygen source. X-ray photoelectron spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy were employed to investigate the compositions, surface morphology and microstructure of the sample. A very flat surface with a root mean square roughness of 0.3 nm could be reached, and a sharp interface between the film and the Si substrate was achieved. The result of optical spectrum at ultraviolet and visible wavelengths showed that the band gap of the Tm2O3 film was 5.76 eV.
汪建军1,2，冀婷3，朱燕艳4，方泽波1，任维义2
1. Department of Physics, Shaoxing University2. College of Physics and Electronic Information, China West Normal University3. Department of Physics and Optoelectronics, Taiyuan University of Technology4. Department of Mathematics and Physics, Shanghai University of Electric Power
摘 要：Single crystalline Tm2O3 films were grown on Si （001） substrates by molecular beam epitaxy using metallic Tm source and atomic oxygen source. X-ray photoelectron spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy were employed to investigate the compositions, surface morphology and microstructure of the sample. A very flat surface with a root mean square roughness of 0.3 nm could be reached, and a sharp interface between the film and the Si substrate was achieved. The result of optical spectrum at ultraviolet and visible wavelengths showed that the band gap of the Tm2O3 film was 5.76 eV.
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