Factors Affecting the Growth of SiC Nano-whiskers

Y.F.Chen,X.Z.Liu and X.W.Deng State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

摘 要：Silicon carbide （SiC） is a IV-IV compound semiconductor material with a wide band gap.Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature,high-power,and high-radiation conditions,in which conventional semiconductors cannot be adequately performed.In this paper,SiH4 and C2H2 were used to synthesize SiC nano-whiskers.Metal Ni was the catalyst.SiC nanowhiskers were grown by vapor-liquid-solid mechanism.The effects of the H2 flow rate,growth temperature,catalyst thickness and growth pressure to grow SiC nano-whiskers were studied.3C-SiC thin film and nano-tips can be synthesized by controlling the growth conditions.

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