简介概要

Anomalous formation of micrometer-thick amorphous oxide surficial layers during high-temperature oxidation of ZrAl2

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2019年第7期

论文作者:Zhangping Hu Yifei Xu Yuanyuan Chen Peter Schützendübe Jiangyong Wang Yuan Huang Yongchang Liu Zumin Wang

文章页码:1479 - 1484

摘    要:The thermal oxidation of ZrAl2 in the temperature range of 550–750℃ in pure oxygen has been investigated by a combinational experimental approach using X-ray diffraction, scanning electron microscopy/energy dispersive spectrometer, Auger electron spectroscopy and cross-sectional transmission electron microscopy. The thermal oxidation leads to the growth of anomalously thick(up to 4.5 μm)amorphous(Zr0.33 Al0.67)O1.66 surficial layers at temperatures as high as 750℃. The oxidation kinetics obeys a parabolic law with an activation energy of 143 kJ/mol. The underlying mechanism for the formation of such micrometer-thick amorphous oxide surficial layers has been discussed on the basis of interface thermodynamics and the occurrence of high interface stability associated with a synchronous oxidation of Al and Zr elements.

详情信息展示

Anomalous formation of micrometer-thick amorphous oxide surficial layers during high-temperature oxidation of ZrAl2

Zhangping Hu,Yifei Xu,Yuanyuan Chen,Peter Schützendübe,Jiangyong Wang,Yuan Huang,Yongchang Liu,Zumin Wang

School of Materials Science and Engineering, Tianjin UniversityMax Planck Institute for Intelligent SystemsDepartment of Physics, Shantou University

摘 要:The thermal oxidation of ZrAl2 in the temperature range of 550–750℃ in pure oxygen has been investigated by a combinational experimental approach using X-ray diffraction, scanning electron microscopy/energy dispersive spectrometer, Auger electron spectroscopy and cross-sectional transmission electron microscopy. The thermal oxidation leads to the growth of anomalously thick(up to 4.5 μm)amorphous(Zr0.33 Al0.67)O1.66 surficial layers at temperatures as high as 750℃. The oxidation kinetics obeys a parabolic law with an activation energy of 143 kJ/mol. The underlying mechanism for the formation of such micrometer-thick amorphous oxide surficial layers has been discussed on the basis of interface thermodynamics and the occurrence of high interface stability associated with a synchronous oxidation of Al and Zr elements.

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