Effect of Annealing Temperature on the Ferroelectric Properties of BiFeO3 Thin Films Prepared by Sol-gel Process
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2010年第3期
论文作者：王秀章
文章页码：384 - 387
摘 要：Sol-gel process was adopted to prepare BiFeO3 films.BiFeO3 films were deposited on LaNiO3 coated Si（100） substrates annealed at 500 and 550 ℃,respectively.The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c.The film annealed at 500 ℃ has larger remnant polarization（Pr） of 35.3 μC/cm2.For the film annealed at 550 ℃,smaller remnant polarization of Pr=4.8 μC/cm2 is observed for its low breakdown electric field.Lower leakage conduction is observed in the film annealed at 500 ℃ at low applied field.
王秀章
Hubei Key Laboratory of Pollutant Analysis & Reuse TechnologySchool of Computer Science and Technology,Huangshi Institue of Technology
摘 要：Sol-gel process was adopted to prepare BiFeO3 films.BiFeO3 films were deposited on LaNiO3 coated Si（100） substrates annealed at 500 and 550 ℃,respectively.The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c.The film annealed at 500 ℃ has larger remnant polarization（Pr） of 35.3 μC/cm2.For the film annealed at 550 ℃,smaller remnant polarization of Pr=4.8 μC/cm2 is observed for its low breakdown electric field.Lower leakage conduction is observed in the film annealed at 500 ℃ at low applied field.
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