TEM STUDY ON LOCALIZED RECRYSTALLIZATION SOI
来源期刊：中国有色金属学报(英文版)1997年第1期
论文作者：Liu Ansheng Shao Beiling Li Yonghong Liu Zheng Zhang Pengfei Tsien Peixin
文章页码：47 - 51
Key words：SOI(silicon on insulator) ;localized recrystallization ;crystallographic orientations ;characters defects TEM
Abstract: Crystallographic orientations and characters of various defects (subgrain boundaries, dislocations etc.) in Si film of heat sink structure SOI (silicon on insulator) prepared by unseeded rapid zone melting recrystallization (ZMR) process with a RF induced graphite strip heater system have been studied with a TEM. The study shows that the process used in this experiment can effectively confine the defects in the predetermined regions of Si film strips on the thicker parts of the SiO 2 layer, and makes the other Si strips with a width of more than 50 μm defect free.
