Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films
来源期刊：Rare Metals2007年第3期
论文作者：LI Li), FANG Liang), CHEN Ximing), LIU Gaobin), LIU Jun), YANG Fengfan), FU Guangzong), and KONG Chunyang) ) College of Photoelectric Engineering, Chongqing University of Posts and Telecommunications, Chongqing , China ) Department of Applied Physics, Chongqing University, Chongqing , China ) Department of Physics, Chongqing Normal University, Chongqing , China
文章页码：247 - 253
摘 要：Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400°C, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, re- spectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 × 10?4 ??cm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sput- tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
LI Li1), FANG Liang2), CHEN Ximing1), LIU Gaobin2), LIU Jun1), YANG Fengfan2), FU Guangzong2), and KONG Chunyang3) 1) College of Photoelectric Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 2) Department of Applied Physics, Chongqing University, Chongqing 400044, China 3) Department of Physics, Chongqing Normal University, Chongqing 400047, China
摘 要：Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400°C, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, re- spectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 × 10?4 ??cm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sput- tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
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