Micro-mechanism of metal magnetic memory signal variation during fatigue
来源期刊：International Journal of Minerals Metallurgy and Materials2014年第3期
论文作者：Ming-xiu Xu Zhang-hua Chen Min-qiang Xu
文章页码：259 - 265
摘 要：Tensile fatigue tests were designed to study the relation between the tangential magnetic memory signal and dislocations. According to experimental results, in the early stage of fatigue, the magnetic signal and the dislocation density rapidly increase; while in the middle stage, the magnetic signal gradually increases, the dislocation density remains steady, and only the dislocation structure develops. On the other hand, in the later stage, the magnetic signal once again increases rapidly, the dislocation structure continues to develop, and microscopic cracks are formed. Analysis reveals that the dislocations block the movement of the domain wall, and the area of dislocation accumulation thus becomes an internal magnetic source and scatters a field outward. In addition, the magnetic memory field strengthens with increasing dislocation density and complexity of the dislocation structure. Accordingly, the dislocation pinning factor related with the dislocation density and the dislocation structure has been proposed to characterize the effect of dislocations on the magnetic memory signal. The magnetic signal strengthens with an increase in the dislocation pinning factor.
Ming-xiu Xu1，Zhang-hua Chen1，Min-qiang Xu2
1. School of Mathematics and Physics, University of Science and Technology Beijing2. Division of Vehicle Dynamics & Control,Harbin Institute of Technology
摘 要：Tensile fatigue tests were designed to study the relation between the tangential magnetic memory signal and dislocations. According to experimental results, in the early stage of fatigue, the magnetic signal and the dislocation density rapidly increase; while in the middle stage, the magnetic signal gradually increases, the dislocation density remains steady, and only the dislocation structure develops. On the other hand, in the later stage, the magnetic signal once again increases rapidly, the dislocation structure continues to develop, and microscopic cracks are formed. Analysis reveals that the dislocations block the movement of the domain wall, and the area of dislocation accumulation thus becomes an internal magnetic source and scatters a field outward. In addition, the magnetic memory field strengthens with increasing dislocation density and complexity of the dislocation structure. Accordingly, the dislocation pinning factor related with the dislocation density and the dislocation structure has been proposed to characterize the effect of dislocations on the magnetic memory signal. The magnetic signal strengthens with an increase in the dislocation pinning factor.
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