简介概要

Magnetism Regulation of (In1-xFex)2O3 Semiconductors Prepared by Sol-gel Method

来源期刊:Journal Of Wuhan University Of Technology Materials Science Edition2010年第1期

论文作者:高洪 孙志刚

文章页码:20 - 23

摘    要:Fe doped In2O3 samples (In1-xFex)2O3 (x=0, 0.05, 0.1, 0.2 and 0.3) on glass substrate were prepared by sol-gel method. The XRD results demonstrate that the solubility of Fe ions in In2O3 matrix is around 20%, above which impurity phase can be observed. The transmittance of the samples with x=0, 0.05, 0.1 and 0.2 are above 80% in the visible region while the transimittance of the glass is 90%. The transmittance curves slightly red-shifts as x increasing. All of the samples except x=0 are ferromagnetic at room temperature. The highest saturation magnetization moment is reached in the sample x=0.2 with 330 emu/cm3, and the coercive force is 169 Oe which is also the largest in our samples. The results indicate that the addition of Fe ions could tune the structure, the ferromagnetism and optical property in the In2O3 matrix.

详情信息展示

Magnetism Regulation of (In1-xFex)2O3 Semiconductors Prepared by Sol-gel Method

高洪,孙志刚

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology

摘 要:Fe doped In2O3 samples (In1-xFex)2O3 (x=0, 0.05, 0.1, 0.2 and 0.3) on glass substrate were prepared by sol-gel method. The XRD results demonstrate that the solubility of Fe ions in In2O3 matrix is around 20%, above which impurity phase can be observed. The transmittance of the samples with x=0, 0.05, 0.1 and 0.2 are above 80% in the visible region while the transimittance of the glass is 90%. The transmittance curves slightly red-shifts as x increasing. All of the samples except x=0 are ferromagnetic at room temperature. The highest saturation magnetization moment is reached in the sample x=0.2 with 330 emu/cm3, and the coercive force is 169 Oe which is also the largest in our samples. The results indicate that the addition of Fe ions could tune the structure, the ferromagnetism and optical property in the In2O3 matrix.

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