Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating
来源期刊：Rare Metals2016年第7期
论文作者：Wan-Qi Qiu Zhong-Wu Liu Ke-Song Zhou
文章页码：520 - 525
摘 要：AlN films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm·min-1 at the temperature of below 85℃ by the magnetic-filtered cathodic arc ion plating（FCAIP） method. The as-deposited AlN films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of AlN is confirmed by N1s and Al2p X-ray photoelectron spectroscopy（XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the AlN surface. The AlN film has Al and N concentrations close to the stoichiometric ratio with a small amount of Al2O3. The prepared AlN films are highly transparent over the wave-length range of 210–990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale AlN films with controlled structure and good optical properties at low temperature.
Wan-Qi Qiu1，Zhong-Wu Liu1，Ke-Song Zhou1,2
1. School of Materials Science and Engineering,South China University of Technology2. New Materials Research Department,Guangzhou Research Institute of Nonferrous Metals
摘 要：AlN films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm·min-1 at the temperature of below 85℃ by the magnetic-filtered cathodic arc ion plating（FCAIP） method. The as-deposited AlN films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of AlN is confirmed by N1s and Al2p X-ray photoelectron spectroscopy（XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the AlN surface. The AlN film has Al and N concentrations close to the stoichiometric ratio with a small amount of Al2O3. The prepared AlN films are highly transparent over the wave-length range of 210–990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale AlN films with controlled structure and good optical properties at low temperature.
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