精铟的化学清洗提纯

来源期刊:中国有色金属学报2009年第3期

论文作者:于丽敏 蒋文全 孙海峰 傅钟臻 夏雯 刘红 孙泽明

文章页码:589 - 594

关键词:精铟;化学清洗;甘油;碘化钾;氯化铵, refined indium; chemical purifying process; glycerin; potassium iodide; ammonium chloride

Key words:refined indium; chemical purifying process; glycerin; potassium iodide; ammonium chloride

摘    要:研究精铟的化学清洗提纯过程,提出甘油碘化钾熔炼及甘油氯化铵熔炼相联合进行化学提纯的方法。研究表明:该方法可将镉、铊等杂质含量降低到10-6以下,并可直接得到表面光亮平整无杂色的铟电极,化学清洗提纯工艺简单易操作;甘油碘化钾熔炼提纯的最佳实验条件是质量比控制在m(KI):m(In)≥0.01,m(glycerin): m(In)≥0.3,搅拌时间控制在1 h;甘油氯化铵处理时氯化铵的用量应控制在 m(NH4Cl):m(glycerin)=0.15。

Abstract: The chemical purifying process of refined indium was studied. In order to remove impurities Cd and Tl effectively, glycerin-KI and glycerin-NH4Cl were used simultaneously to purify indium. The results show that through this method the contents of impurities Cd and Tl in indium can be reduced to less than 10-6, thus refined indium anode with smooth and bright surface can be gained directly and easily. The best experimental conditions of glycerin-KI are m(KI):m(In)≥0.01, m(glycerin):m(In)≥0.3, and the stirring time should be controlled within 1 h. The ammonium chloride concentration should be controlled within m(NH4Cl):m(glycerin)=0.15.

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