Optical and Micro-Structural Properties of ZnO Thin Films Grown on Silicon Substrate by Pulsed Laser Deposition
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Xue Shoubin Tian Deheng Hu Lijun Wu Yuxin Zhuang Huizhao Xue Chengshan He Jianting
Key words：PLD; ZnO; substrate temperature; oxygen pressure;
Abstract: ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd∶YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 ℃ in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.
Xue Shoubin1，Tian Deheng1，Hu Lijun1，Wu Yuxin1，Zhuang Huizhao1，Xue Chengshan1，He Jianting1
(1.Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China)
Abstract:ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd∶YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 ℃ in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.
Key words:PLD; ZnO; substrate temperature; oxygen pressure;
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