Microstructure and thermal conductivity of submicron Si3N4 reinforced 2024Al composite
YANG Wen-shu(杨文澍), XIU Zi-yang(修子扬), CHEN Guo-qin(陈国钦), WU Gao-hui(武高辉)
1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
Received 10 June 2009; accepted 15 August 2009
Abstract: An 2024Al matrix composite reinforced with 36%(volume fraction) β-Si3N4 particles was fabricated by pressure infiltration method, and its microstructure and the effect of annealing treatment on thermo-conductivity were discussed. Si3N4 particles distribute uniformly without any particle clustering and no apparent particle porosity or significant casting defects are observed in the composites. The combination of particles and matrix is well. The raw Si3N4 particles are regular cylindrical polyhedron with flat surface and change to serrated surface in composite due to reactions during fabrication. Thermal conductivity of as-cast Si3N4p/2024 composite is 90.125 W/(m?K) at room temperature, and increases to 94.997 W/(m?K) after annealing treatment. The calculated results of thermal conductivity of the Si3N4p/Al composite by Maxwell model, H-S model and PG model are lower than experimental results while that by ROM model is higher.
Key words: composite; interface; thermal conductivity; calculation; submicron particles
1 Introduction
Silicon nitride (Si3N4) has a good thermal and chemical stability, high mechanical strength and hardness, and good wear, creep, and corrosion resistance. It attracts research community[1-3]. The Si3N4 particles reinforced aluminium matrix composites (Si3N4p/Al) present several advantages that are high specific strength, low thermal expansion coefficient, high thermal conductivity, high intensity and good dimensional stability, which make them very attractive for applications in aerospace, automotive, electronics, machinery manufacture industry [4-6].
However, the major obstacle for fabricating high performance Si3N4p/Al composite is the poor wettability of Si3N4 particles to liquid aluminium[7]. Fortunately, pressure infiltration method is an effective technique to fabricate poor-wetting system via forcing infiltration of molten metal alloy under high pressure, and it has the advantages of simple fabrication technology, high density and no restrictions on alloy[8]. In this work, 2024Al matrix composite reinforced with 36%(volume fraction) β-Si3N4 particles (about 0.2 ?m) was fabricated
by pressure infiltration method, the microstructure characteristics of Si3N4p/2024 composite and the interactions between Si3N4 and aluminium were studied, the effect of annealing treatment on thermal conductivity was discussed.
2 Experimental
The β-Si3N4 particles with an average particle size of 0.2 ?m, as shown in Fig.1, were used to reinforce 2024Al alloy by pressure infiltration method, and the chemical compositions of the alloy are Cu 4.79%, Mg 1.49%, Mn 0.611%, Fe 0.245%, Si 0.168%, Zn 0.068%, Cr 0.049%, Ti 0.046%, Ni 0.013% (mass fraction) and Al balance.
The microstructure analysis was conducted by Philips CM-12 and JEOL 200CX transmission electron microscope (TEM) with an accelerated voltage of 100- 120 kV and 200 kV, respectively. The thermal conductivity and specific heat capacity of composite and matrix with diameter of 12.7 mm and length of 3 mm were examined on a laser thermal conduction analyzer (JK2, Germany) from 25 to 500 ℃ with a rate of 5 ℃/min.
Fig.1 SEM image of Si3N4 particles
3 Results and discussion
It is well established that a dense microstructure is beneficial to thermal conductivity. The optical microstructure of the as-cast Si3N4p/2024 composite is shown in Fig.2. It can been seen from Fig.2 that Si3N4 particles distribute uniformly without any particle clustering and no apparent porosity or significant casting defects are observed in the composites.
Fig.2 Optical microstructure of as-cast Si3N4p/2024 composite
TEM images of Si3N4 particles is shown in Fig.3. It can been seen from Fig.3 that the Si3N4 particles in matrix alloy distribute uniformly. The distance between particles is very small due to high volume fraction, and the combination of particles and matrix is good and no separation between Al and Si3N4 particles is observed. Generally, high density of dislocations is always found in aluminium composites reinforced with micron particles because of large thermal mismatch stress generated by coefficient of thermal expansion (CTE) difference between the ceramic particles and matrix [9-10]. However, it is difficult to observe the dislocation in Al matrix reinforced with submicron Si3N4 particles although the CTE difference of them is also extreme. It accords to other researches in submicron particles reinforced composite[11-12].
It should be noted that the raw Si3N4 particles (see Fig.1) are regular cylindrical polyhedron with flat surface.
Fig.3 TEM image of Si3N4 particles
However, its surface changes to be serrated after composite fabrication (see Fig.4) and all reactions are as follows[13]:
Si3N4(s)+O2(g)→3SiO2(s)+2N2(g) (1)
3SiO2(s)+4Al(l)→2Al2O3(s)+3Si(l) (2)
SiO2(s)+2Mg(l)→2MgO(s)+Si(l) (3)
2SiO2(s)+Mg(l)+2Al(l)→MgAl2O4(s)+2Si(l) (4)
4Al(l)+Si3N4(s)→4AlN(s)+3Si(l) (5)
2Mg(l)+Si(l)→Mg2Si(s) (6)
The above reactions are all possible in thermodynamics and the thermodynamic stability or
Fig.4 TEM image of Si3N4 particle and interface (a) and electron diffraction pattern of Si3N4 particle (b)
kinetics needs to be in consideration for confirming the actual reaction. Unfortunately, phonons movement will be impeded by the interface and the interfacial reactant, which eventually performs negative effect on thermal conduction.
Thermal conductivity λ is calculated by following equation:
λ=α?Cp?ρ (7)
where α, ρ and cp are referred to thermal diffusivity, density and specific heat capacity, respectively. The density of Si3N4p/2024 composite is 2.9 g/cm3, and test results of as-cast and as-annealing are listed in Table 1.
Table 1 Thermal conduction testing results of Si3N4p/2024 composite
There are two ways for heat transfer in Si3N4p/2024 composite, free electron in Al matrix and phonon in Si3N4 particles. Both movements would be scattered by interface. Therefore, heat conduction in Si3N4p/2024 composite depended on Al matrix, Si3N4 particles and their interface. The annealing treatment would release residual thermal stress in Al matrix generated in fabrication, which is beneficial to heat conduction, and then improve the thermal conductivity of Si3N4p/2024 composite.
One significant advantage of composites is their designable. The accurate prediction of composite performance before fabrication or control of component to meet performance requirement, which would shorten the design and fabrication cycle of composites, is attracting all researchers on composite. However, accurate prediction must be based on the accurate theoretical foundation. The main theoretical prediction models for the thermal conductivity of composite include Maxwell model, H-S model and PG model.
1) Maxwell considers the effect of matrix conduction, particle conduction and particles fraction while particle is simplified as spherical particle, and the following equation can be obtained:
(8)
where κcom, κm, κp are referred to thermal conductivities of composite, matrix and particle, respectively; φp is volume fraction of particle.
2) Based on ESHELBY’s equivalent inclusion theory[14], HATTA and TAYA[15] consider the effect of particle shape and obtained the general expression of thermal conductivity, which can be expressed as follows for particle reinforced composite:
(9)
3) KLEMENS[16] derived the relationship among thermal conductivity of composites, thermal conductivity of matrix, thermal conductivity and volume fraction particle of as follows:
(10)
The models mentioned above were adopted to calculate thermal conductivity of Si3N4p/2024 composite and the theoretical values and experimental value are listed in Table 2.
Table 2 Theoretical and experimental thermal conductivities of as-annealed Si3N4p/2024 (W?m-1?K-1)
It is obvious that the calculated values are different from values by models, and the values calculated by Maxwell model, H-S model and PG model are lower than experimental results while the value by ROM model is higher.
4 Conclusions
1) Si3N4 particles distribute uniformly without any particle clustering and no apparent porosity or significant casting defects are observed in the composites. The distance between particles is very small due to its high volume fraction and dispersive distribution, and the combination of particles and matrix is good.
2) The raw Si3N4 particles are regular cylindrical polyhedron with flat surface and its surface changes to be serrated due to reactions during composite fabric.
3) Thermal conductivity of casting Si3N4p/2024 composite is 90.125 W/(m?K) at room temperature, and after annealing treatment, it will improve to 94.997 W/ (m?K). The calculated values by thermal conductivity of Maxwell model, H-S model and PG model are lower than experimental result while value by ROM model is higher.
References
[1] HAN I S, SEO D W, KIM S Y, HONG K S, GUAHK K H, LEE K S. Properties of silicon nitride for aluminum melts prepared by nitrided pressureless sintering [J]. Journal of the European Ceramic Society, 2008, 28: 1057-1063.
[2] HUANG H, WINCHESTER K J, SUVOROVA A, LAWN B R, LIU Y, HU X Z. Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films [J]. Mater Sci Engineering A, 2006, 435/436: 453-459.
[3] CARRASQUERO E, BELLOSI A, STAIA M H. Characterization and wear behavior of modified silicon nitride [J]. International Journal of Refractory Metals and Hard Materials, 2005, 23(4/6): 391-397.
[4] WANG Yang-wei, YU Xiao-dong, WANG Fu-chi, MA Zhang, KANG Xiao-peng. Mechanism of reaction infiltration of pressureless infiltrated Si3N4/Al composite [J]. Rare Metal Materials and Engineering, 2007, 36(s1): 777-780.
[5] WU Run, WANG Ya-hong. Study on material Al-Si3N4 infiltration technique [J]. Mining and Processing Equipment, 2007, 35(8): 122-124.
[6] WANG Yang-wei, WANG Fu-chi, YU Xiao-dong, LI Jun-tao. Study of interface reaction in the Si3N4/Al composite prepared by pressureless infiltration [J]. Journal of Aeronautical Materials, 2006, 26(1): 55-58. (in Chinese)
[7] de la PE?A J L, PECH-CANUL M I. Reactive wetting and spreading of Al-Si-Mg alloys on Si3N4/Si substrates [J]. Mater Sci and Eng A, 2008: 491(1/2): 461-469.
[8] WU Guo-hui, ZHANG Qiang, CHEN Guo-qin, JIANG Long-tao, XIU Zi-yong. Properties of high reinforcement-content aluminum matrix composite for electronic packages [J]. Journal of Materials Science Materials in Electronics, 2003, 14(1): 9-12.
[9] HONG S K, WON C W, SHIN D H. Interfacial microchemistry and microstructure of Al-Mg-Si alloy matrix composites reinforced with Al2O3 particulates [J]. Scripta Materialia, 1997, 36(8): 883-889.
[10] ZHANG Q, XIU Z Y, SONG M H, WU G H. Microstructure and properties of a 70vol% SiCp/Al-12Si composite for electronic packaging [J]. Materials Science Forum, 2005, 475/479: 881-884.
[11] YU Zhi-qiang, WU Gao-hui, JIANG Long-tao. Effect of surface modification of sub-micron Al2O3 particles by rare-earth on interfacial wettability of Al matrix composites [J]. The Chinese Journal of Nonferrous Metals, 2005, 15(7): 1087-1093. (in Chinese).
[12] JIANG Long-tao, WU Gao-hui, SUN Dong-li, ZHANG Qiang, NORIO K. Microstructural of sub-micron Al2O3 particles and interfacial characteristic of Al2O3p/1070Al composites [J]. The Chinese Journal of Nonferrous Metals, 2002, 12(2): 342-347. (in Chinese).
[13] WANG S R, WANG Y Z, WANG Y, GENG H R, CHI Q S. Microstructure and infiltration kinetics of Si3N4/Al-Mg composites fabricated by pressureless infiltration [J]. Journal of Materials Science, 2007, 42: 7812-7818.
[14] ESHELBY J D. The determination of the elastic field of an ellipsoidal inclusion, and related problems [J]. Proceedings of the Royal Society of London Series A, Mathematical and Physical Sciences. London: The Royal Society, 1957: 376-396.
[15] HATTA H, TAYA M. Effective thermal conductivity of a misoriented short fiber composite [J]. Journal of Applied Physics, 1985, 58(7): 2478-2486.
[16] KLEMENS P G. The thermal conductivity of dielectric solids at low temperatures (theoretical) [J]. Proceedings of the Royal Society of London Series A, Mathematical and Physical Sciences, 1951: 108-133.
(Edited by LI Yan-hong)
Foundation item: Project(2003AA305110) supported by the Hi-tech Research and Development Program of China
Corresponding author: XIU Zi-yang; Tel: +86-451-86402373-5056; E-mail:xiuzy@hit.edu.cn