基片偏压对电弧离子镀ZrN薄膜微结构和表面形貌的影响

来源期刊:中国有色金属学报(英文版)2012年第z1期

论文作者:张 敏 胡小刚 杨晓旭 徐菲菲 金光浩 邵志刚

文章页码:115 - 119

关键词:氮化锆;薄膜;电弧离子镀;基片偏压;微结构

Key words:zirconium nitride (ZrN); thin film; arc ion plating; substrate bias; microstructure

摘    要:在不同的基片偏压下利用电弧离子镀技术制备氮化锆薄膜,以考察基片偏压对氮化锆薄膜微结构和表面形貌的影响。利用XRD、EPMA和FE-SEM等技术对不同偏压时得到ZrN薄膜的相结构、成分和表面形貌进行表征。结果表明,薄膜中存在立方氮化锆和六方纯锆相;随着基片偏压的增大,薄膜的择优取向由(111)变为(200),最后变为(111),晶粒尺寸由30 nm减小至15 nm。同时发现,随着基片偏压的增大,薄膜微结构由明显的柱状特征变为致密的等轴晶特征,表明由偏压增强的离子轰击能有效抑制柱状晶生长;薄膜沉积速率和锆氮摩尔比随着基片偏压的增大先增大后减小,在-50 V时达到最大。

Abstract: Zirconium nitride thin films were fabricated using arc ion plating under negative substrate biases to investigate the influence of substrate bias on the ZrN films. The phase, composition, and surface morphology of the ZrN films, with respect to substrate bias, were studied by XRD, EPMA, and FE-SEM, respectively. The results show that cubic ZrN and hexagonal Zr phases form in the ZrN films. The competition between surface energy and strain energy makes the preferred orientation change from (111) to (200) and then back to highly (111) preferred orientation as a function of substrate bias. With the increase of bias voltage, the crystallite size of ZrN films reduces from 30 to 15 nm. Meanwhile, the film microstructure evolves from an apparent columnar structure to a highly dense equiaxed structure, indicating that the ion bombardment enhanced by substrate bias can suppress the columnar growth in the ZrN films. Deposition rate and mole ratio of Zr to N increase with the increase of bias voltage and reach the maximum at -50 V, and then show a decline trend when bias voltage further increases.

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