简介概要

Synthesis and Properties of UV-curable Hyperbranched Polyurethane and Its Application in the Negative-type Photoresist

来源期刊:Journal Of Wuhan University Of Technology Materials Science Edition2014年第1期

论文作者:刘敬成 LIN Licheng JIA Xiuli LIU Ren ZHANG Shengwen 刘晓亚

文章页码:208 - 212

摘    要:UV-curable hyperbranched polyurethane(UV-HBPU) containing carboxyl groups was synthesized from isophorone diisocyanate(IPDI), diethanolamine(DEOA), polyethylene glycol(PEG-400), hydroxyethyl acrylate(HEA), and 2,2-bis(hydroxymethyl) propionic acid(DMPA). The UV-HBPU was used as a negative-type photoresist for a printed circuit board(PCB). Fourier-transform infrared spectroscopy(FTIR) and proton nuclear magnetic resonance(1HNMR) spectroscopy of UV-HBPUs indicated that the synthesis was successful. Differential scanning calorimetry(DSC) and thermogravimetric analysis(TGA) showed that the thermal stability of the UV-HBPUs decreased as the HEA content increased. The polymer exhibited excellent photoresist properties, and the resolution of circuits based on this negative-type photoresist reached 10 μm.

详情信息展示

Synthesis and Properties of UV-curable Hyperbranched Polyurethane and Its Application in the Negative-type Photoresist

刘敬成,LIN Licheng,JIA Xiuli,LIU Ren,ZHANG Shengwen,刘晓亚

School of Chemical and Material Engineering, Jiangnan University

摘 要:UV-curable hyperbranched polyurethane(UV-HBPU) containing carboxyl groups was synthesized from isophorone diisocyanate(IPDI), diethanolamine(DEOA), polyethylene glycol(PEG-400), hydroxyethyl acrylate(HEA), and 2,2-bis(hydroxymethyl) propionic acid(DMPA). The UV-HBPU was used as a negative-type photoresist for a printed circuit board(PCB). Fourier-transform infrared spectroscopy(FTIR) and proton nuclear magnetic resonance(1HNMR) spectroscopy of UV-HBPUs indicated that the synthesis was successful. Differential scanning calorimetry(DSC) and thermogravimetric analysis(TGA) showed that the thermal stability of the UV-HBPUs decreased as the HEA content increased. The polymer exhibited excellent photoresist properties, and the resolution of circuits based on this negative-type photoresist reached 10 μm.

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