以W取代Re对γ''-Ni3Al相位错滑移调制蠕变的影响
来源期刊:中国有色金属学报(英文版)2021年第7期
论文作者:易洲 胥云雷 彭平 陈江华
文章页码:2013 - 2023
关键词:镍基单晶高温合金;γ′-Ni3Al;广义堆垛层错能;理想剪切强度;位错;交滑移
Key words:Ni-based single crystal superalloy; γ′-Ni3Al; generalized stacking fault energy; ideal shear strength; dislocation; cross-slip
摘 要:γ′-Ni3Al相在高温下的反常流变行为与1/2<110>{111}超级部分位错的交滑移密切相关。沿最低能量路径获得的广义堆垛层错能曲线(即Γ面)可以提供大量有关位错形核和运动的信息。采用第一性原理计算,研究Re、W、Mo、Ta、Ti单掺杂与双掺杂对γ′-Ni3Al相Γ面和理想剪切强度τmax 的影响。与Re掺杂的情形类似,W在堆垛层错处的Suzuki偏聚可阻止1/6<112>{111} Shockley部分位错的运动和促进1/2<110>{111}超级部分位错的交滑移。当Re被W部分取代时, 的降低表明γ′相在高温下的反常流变行为不如双Re掺杂,但τmax的增加却表明镍基单晶高温合金的蠕变断裂强度在一定程度上可从中受益,尤其是Re和W在Al-Al位的共偏聚。当点缺陷X1Al和X2Al之间的相互作用采用关联能函数 来表征时,无论是吸引还是排斥,强关联都不利于γ′相屈服强度的提高。
Abstract: The anomalous flow behavior of γ′-Ni3Al phases at high temperature is closely related to the cross-slip of 1/2<110>{111} super-partial dislocations. Generalized stacking fault energy curves (i.e., Γ-surfaces) along the lowest energy path can provide a great deal of information on the nucleation and movement of dislocations. With the first-principles calculation, the interplay between Re and W, Mo, Ta, Ti doped at preferential sites and their synergetic influence on Γ-surfaces and ideal shear strength (τmax) in γ′-Ni3Al phases are investigated. Similar to single Re-addition, the Suzuki segregation of W at stacking faults is demonstrated to enable to impede the movement of 1/6<112>{111} Shockley partial dislocations and promote the cross-slip of 1/2<110>{111} super-partial dislocations. With the replacement of a part of Re by W, a decreased indicates that the anomalous flow behavior of γ′ phases at high temperature is not as excellent as the double Re-addition, but an increased τmax means that the creep rupture strength of Ni-based single crystal superalloys can be benefited from this replacement to some extent, especially in the co-segregation of Re and W at Al-Al sites. As the interaction between X1Al and X2Al point defects is characterized by an correlation energy function , it is found that both strong attraction and strong repulsion are unfavarable for the improvement of yield strengths of γ′ phase.
Trans. Nonferrous Met. Soc. China 31(2021) 2013-2023
Zhou YI, Yun-lei XU, Ping PENG, Jiang-hua CHEN
School of Materials Science and Engineering, Hunan University, Changsha 410082, China
Received 6 August 2020; accepted 18 February 2021
Abstract: The anomalous flow behavior of γ′-Ni3Al phases at high temperature is closely related to the cross-slip of 1/2<110>{111} super-partial dislocations. Generalized stacking fault energy curves (i.e., Γ-surfaces) along the lowest energy path can provide a great deal of information on the nucleation and movement of dislocations. With the first-principles calculation, the interplay between Re and W, Mo, Ta, Ti doped at preferential sites and their synergetic influence on Γ-surfaces and ideal shear strength (τmax) in γ′-Ni3Al phases are investigated. Similar to single Re-addition, the Suzuki segregation of W at stacking faults is demonstrated to enable to impede the movement of 1/6<112>{111} Shockley partial dislocations and promote the cross-slip of 1/2<110>{111} super-partial dislocations. With the replacement of a part of Re by W, a decreased indicates that the anomalous flow behavior of γ′ phases at high temperature is not as excellent as the double Re-addition, but an increased τmax means that the creep rupture strength of Ni-based single crystal superalloys can be benefited from this replacement to some extent, especially in the co-segregation of Re and W at Al-Al sites. As the interaction between X1Al and X2Al point defects is characterized by an correlation energy function , it is found that both strong attraction and strong repulsion are unfavarable for the improvement of yield strengths of γ′ phase.
Key words: Ni-based single crystal superalloy; γ′-Ni3Al; generalized stacking fault energy; ideal shear strength; dislocation; cross-slip
1 Introduction
Ni-based single crystal (SC) superalloys are widely applied in most aero-engine combustors, because of outstanding ability to retain strength and withstand creep at high temperature [1,2]. Their excellent comprehensive performances rely primarily on the microstructure of γ′ precipitates with L12 structure embedded coherently in fcc γ matrixes [3], as well as many kinds of refractory elements such as Re, W, Mo, Ta, Ti, Cr, and Ru. Re is proven to be a crucial element in the creep of Ni-based SC superalloys, and the indispensable strengthening is usually called as Re-effect [4]. However, an excessive addition of Re leads to some detrimental topologically close-packed (TCP) phases to be deposited [5]. Also, a limited reserve of this expensive Re element motivates the development of low Re-addition superalloys. Recently, several investigations [6,7] have demonstrated that Re can be partially replaced by other refractory metals. For example, as a half amount of Re in CMSX-4 superalloys is replaced by W, almost the same creep properties, e.g., minimum creep rate, time to reach 2% strain and time for failure at 1123 and 1373 K, can be obtained [6]. Moreover, calculated thermal expansion coefficients and bulk moduli of γ′-Ni3Al phases at finite temperature and certain pressure suggest that W is of potential possibility to replace Re in Ni-based SC superalloys [7]. However, for the flow behavior of γ′-Ni3Al phases, these results don’t provide how to be affected by partial replacements of W for Re. Therefore, a cooperative effect of duplex additions of Re and W on the dislocation slip mediated creep in γ′-Ni3Al phases is desired.
Previous investigations showed that the configuration and movement of dislocations play an important role in the plastic deformation of γ′ phases [8,9]. At the early stage of creep, the flow behavior of Ni-based SC superalloys mainly depends on the activation of 1/2<110>{111} dislocations in γ channels [10]. With the increase of dislocation densities in γ channels, some 1/2<110>{111} matrix pairs can combine to form <110>{111} super dislocation at the γ/γ′ interface. Once inside the γ′ phase, these <110>{111} super dislocations are easily dissociated [11]. At high temperature and low stress, the most possible deformation mechanism is to be sheared by 1/2<110>{111} pairs connected by an anti-phase boundary (APB) fault, i.e., <110>{111}→1/2<110>{111}+APB+1/2<110>{111} [12], and the 1/2<110>{111} super-partial dislocation can be further dissociated into two 1/6<112>{111} Shockley partial dislocations separated by a complex stacking fault (CSF), i.e., 1/2<110>{111}→1/6<112>{111}+CSF+1/6<112>{111} [12]. In this case, one <110>{111} super dislocation can be described by four Shockley partial dislocations (i.e., P1=P3 and P2=P4) bounded by one APB and two CSFs (Fig. 1(a)), and a mutual elastic interaction among 1/2<110>{111} super-partial dislocations can generate a tangential force perpendicular to {111} slip plane [13]. In general, a high APB energy will make APB ribbons among 1/2<110>{111} super-partial dislocations narrow, leading to stronger tangential force and increased driving force of cross-slips of 1/2<110>{111} super-partial dislocations. It is widely accepted that this cross-slip of screw dislocations should be responsible for the anomalous flow behavior of γ′ phases at high temperature [14]. For the cross-slip of 1/2<110>{111} dislocations, a temporary recombination of 1/6<112>{111} Shockley partial dislocations [13] is required, and a lifted CSF energy can lessen the width of CSF regions and lower the constriction energy of 1/6<112>{111} Shockley partial dislocations [14]. Owing to low APB energy in cubic {001} planes relative to octahedral {111} planes, Shockley partial dislocations P3 and P4 as a leading pair may cross- slip to {001} planes from {111} planes. As a result, Kear–Wilsdorf (K-W) lock [15] can be formed. This K-W lock will restrict the movement of P3 and P4, which makes Shockley partial dislocations P1 and P2 as a trailing pair stay still on {111} planes (Fig. 1(b)). Thus, the tendency of cross-slips of leading 1/2<110>{111} super-partial dislocations can be utilized to evaluate the ability of plastic deformations of γ′ phases to some extent, and the easier the cross-slip of 1/2<110>{111} super-partial dislocations is, the larger the yield strength of γ′ phases at high temperature is [16].
To obtain the information of dislocation slip mediated creeps, lots of researches on cross-slips of 1/2<110>{111} super-partial dislocations in γ' phases have been reported [13-15,17]. For example, the influence of refractory metals on generalized stacking fault energy curves (Γ-surfaces) [14,18] and ideal shear strengths (τmax) [19,20] in and slip systems were systematically investigated. It is pointed out that W-addition not only remarkably raises the APB energy γAPB and CSF energy γCSF on (111) planes, but also hoists unstable stacking fault energies γusf and ideal shear strengths τmax, and the magnitude is preceded only by Re in the sequence of Re>W> Mo>Ta>Ti>Ru, indicating that W-addition is beneficial to impeding the emission, propagation and movement of 1/2<110>{111} super-partial dislocations and 1/6<112>{111} Shockley partial dislocations. Moreover, it is demonstrated that the cross-slip activation enthalpy of 1/2<110>{111} super-partial dislocations can be lowered by the addition of Re, W and Mo [14], which means that W-addition may also accelerate the cross-slips and promote sessile dislocation locks to be generated, similarly to Re-addition. Recently, in the view of multi-component characteristics of Ni-based SC superalloys, a density functional theory (DFT) based cluster expansion calculation of composition- dependent γAPB was also performed by DODARAN et al [13]. Their results showed that the impact of individual solute elements X on γAPB obtained in a ternary L12-Ni3Al(X) crystal cannot be directly translated to a multi-solute γ' phases due to a correlation and synergistic effect among solute elements. For this reason, the influence of multi-additions of Re and W on τmax in and slip directions was further investigated [8,9]. It is found that a double Re-addition at preferential Al-Al sites may further elevate τmax in the single Re-addition system, and τmax in a multi-addition of Re and W is even larger than that of the double Re-addition, but an extra addition of Re or W at a Ni site is not conducive to the improvement of τmax in and slip directions. This result once again indicates that the correlation and synergistic effect among solute elements cannot be ignored, and the interplay among refractory metals plays an important role in the dislocation slip mediated creeps of γ′ phases.
Fig. 1 Schematic diagrams of cross-slip of screw dislocations in L12-Ni3Al crystals
In this work, several stacking fault models of L12-Ni3Al(X) crystals with X=Re, W, Mo, Ta and Ti are constructed in order to investigate the interplay among refractory metals in APB and CSF in γ′ phases. And then, exact calculations of Γ-surfaces and τmax in and slip directions are carried out. Finally, the influence of various multiple additions on the cross-slip of 1/2<110>{111} super-partial dislocations and the nucleation and movement of 1/6<112>{111} Shockley partial dislocations is discussed, and a special attention is paid to the impact of a partial replacement of Re by W.
2 Calculation
The first-principles calculation is performed by Vienna ab initio simulation package (VASP) [21] based on the density functional theory (DFT), in which a plane-wave basis set with the projector augmented wave (PAW) [22] is used to characterize the ion-electron interaction, and the exchange correlation term is described within the generalized gradient approximation (GGA) parameterized by Perdew-Burke-Ernzerhof (PBE) functional [23]. In our self-consistent field (SCF) calculation, the cutoff energy of plane wave functions is set to be 350 eV. A conjugate gradient method [24] has been utilized to optimize the geometry and all atomic positions in the supercell are relaxed until the force on each atom is less than 0.009 eV/. The calculation of total energies and electronic structures is followed by cell optimization with SCF tolerance of 1×10-5 eV under GGA-PBE potential.
A series of 24-atom supercells have been constructed to calculate the ideal shear strength τmax in and slip systems (Fig. 2(a)). Here, the shear direction or and the slip plane (111) have been rotated to be parallel to the lattice vector a and normal to the lattice vector c as proposed by ROUNDY et al [25] and OGATA et al [26], respectively. In the shear deformation, a particle swarm optimization algorithm [27] has been adopted to yield the curve of stress τ versus strain ε. After being sheared, the deformed lattice vectors R can be obtained by R=R0D, where the matrix R0 represents the un-deformed lattice vector. The deformation matrix D [19] is
(1)
where ε is the shear strain, i.e., a ratio of displacement △a with respect to height c in the rotated supercell. In the first-principles calculation, atom positions are represented by fractional coordinates. At each step of shear deformations, the configuration of previous steps is used as a starting point [28]. The atom position and cell shape are relaxed under the constraint of fixed shear strain ε.
To calculate generalized stacking fault energy curves (Γ-surfaces) of L12-Ni3Al crystals along and slip directions, several (111) surface models are also built by a similar redefined lattice method for the construction of aforementioned shear models. In these surface models, a slab model of 96 atoms is composed of 12 (111) atomic layers with the stacking sequence of ABCABCABCABC, and a 12 vacuum region is added in the direction normal to the slip plane to avoid the interaction among faults in two neighbor slabs (Fig. 2(b)). In the calculation of Γ-surfaces, the atoms over a designated (111) slip plane will be moved along the or direction. As a result of shearing b=a0/2 in the direction and b=a0/6 in the direction, an anti-phase boundary (APB) fault and complex stacking fault (CSF) will be generated, respectively. As for the calculation of Γ-surfaces of APBs on a (001) plane, the surface model is shown in Fig. 2(c). Its APB can be obtained by slipping a part of atoms over a designated (001) slip plane along [110] direction until a distance b=a0/2, in which a0 is an equilibrium lattice parameter of L12-Ni3Al crystals. In the movement of slabs, all atoms in the supercell will be relaxed, but only the direction perpendicular to (111) or (001) plane is allowed.
3 Results and discussion
3.1 Effect of alloying elements on dislocation slip mediated creep of γ′ phases
Previous investigations [29-31] revealed most of Ta and Ti partition to the γ′ phase, while W uniformly distributes between the γ matrix and γ′ precipitates. Re and Mo mainly partition to the γ phase, but some of them enable to enter into γ′ phases [18]. In the γ′-Ni3Al phase, either Ta and Ti or W, Re and Mo preferentially occupy Al sites [31,32]. As one Al atom on the (111) slip plane is substituted by X=Ta, Ti, W, Re, Mo (marked as XAl), the Γ-surfaces along and slip directions in γ′-Ni3Al(X) phases are calculated firstly. From Figs. 3(a, b), one can see that the APB energy and the CSF energy γCSF in a perfect L12-Ni3Al crystal are 203 and 173 mJ/m2, respectively. These values agree well with previous calculation results [14]. As for single X-addition, Fig. 3(a) shows (=371 mJ/m2) in the ReAl model is the largest, and then (=362 mJ/m2) in the WAl model and (=346 mJ/m2) in the MoAl model, followed by (=329 mJ/m2) in the TaAl model and (=299 mJ/m2) in the TiAl model. As well known, strongly affects the cross-slip of 1/2<110>{111} super-partial dislocations. As is low, the tangential force component generated by the interaction of 1/2<110>{111} super-partial dislocations may significantly reduce cross-slip rate [13]. Obviously, all of Ta-, Ti-, W-, Re- and Mo-addition can improve the cross-slip of 1/2<110>{111} super-partial dislocations from {111} to {001} planes, among which the Re-addition is the best. Meanwhile, a similar variation of γCSF to can also be observed from Fig. 3(b). That is: (=332 mJ/m2) in ReAl model > (=319 mJ/m2) in WAl model > (=315 mJ/m2) in MoAl model >(=301 mJ/m2) in TaAl model > (=260 mJ/m2) in TiAl model. Since γCSF determines the driving force of cross-slips to some extent and affects the width of two CSF regions related to the energy of constrictions of 1/6<112>{111} Shockley partial dislocations [14], an increasing γCSF relative to the perfect L12-Ni3Al crystal indicates that Re-, W-, Mo-, Ta- and Ti-addition can also decrease the width of CSF regions. Therefore, they can all lower the constriction energy of 1/6<112>{111} Shockley partial dislocations.
Fig. 2 Schematic diagrams of Ni3Al(X) stacking fault models for calculation of τmax and Γ-surfaces
Fig. 3 Curves of fault energy (a, b) and stress τ vs strain ε (c, d) in Ni3Al(X) stacking fault models
The unstable stacking fault energy γusf [33-35], as a measure of energy release rate for dislocation nucleation relevant to ductile response of the material, represents an intrinsic energy barrier for activated stacking faults. In the separation of <110>{111} super dislocations, a high γusf means a large shear stress to be requested for the nucleation of 1/2<110>{111} super-partial dislocations [18]. Figures 3(a, b) show that γusf values in and slip directions are simultaneously elevated by single X-addition. For example, relative to the perfect L12-Ni3Al crystal, γusf in and slip directions are lifted by 162 and 159 mJ/m2 in the Re-addition model, respectively. These results indicate that either emission of 1/2<110>{111} super-partial dislocations or nucleation of 1/6<112>{111} Shockley partial dislocations is restricted by Re-, W-, Mo-, Ta- and Ti-addition, and the order of ReAl>WAl>MoAl>TaAl> TiAl>Ni3Al reveals that Suzuki segregations [36,37] of Re, W, Mo at APBs and CSFs are more profitable than the partitioning of Ta and Ti in γ′ phases.
Another parameter related to γusf is the ideal shear strength τmax, which is a critical stress required to plastically deform a perfect crystal [26]. τmax provides an upper bound of creep strength a material can achieve [28], although it can be affected by dislocations, grain boundaries, cracks and other micro-structural defects in a real crystal. To obtain some crucial information of resistances to creep deformations, τmax in and slip systems are further calculated. Figures 3(c, d) exhibit the variation of stress τ versus strain ε in the γ′-Ni3Al(X) phase with and without single X-addition. For the perfect L12-Ni3Al crystal, Fig. 3(c) shows that the shear stress τ along direction reaches its maximum value of 4.79 GPa at ε=0.16, which means that τmax in the slip direction is 4.79 GPa. Similarly, τmax (=4.23 GPa) at ε=0.18 in the slip direction can also be deduced from Fig. 3(d). In ReAl, WAl, MoAl, TaAl and TiAl models, τmax is found to increase by 3.17, 3.04, 2.90, 2.39 and 2.25 GPa in the slip direction and 2.39, 2.24, 1.98, 1.58 and 1.49 GPa in the slip direction relative to the perfect L12-Ni3Al crystal, respectively, which means that all of Re, W, Mo, Ta and Ti can act as an efficient obstacle in the movement of initial 1/2<110>{111} super-partial dislocations and subsequent 1/6<112>{111} Shockley partial dislocations. Consequently, from the resistance to dislocation movements concerned, Re-, W-, Mo-, Ta- and Ti-additions are also profitable for the improvement of creep strengths of Ni-based SC superalloys.
Since the anomalous flow behavior of L12-Ni3Al crystals at high temperature mainly arises from thermally activated cross-slips of screw dislocations from primary {111} slip planes onto the {001} cubic planes, a variation of configuration energies of <110>{111} super dislocations induced by cross-slips of 1/2<110>{111} super-partial dislocations is further calculated on the basis of PPV model (Fig. 1). In this PPV model [38], the difference in configuration energies of super dislocations per unit length before and after cross-slips can be evaluated by
(2)
where is APB energy in {001} stacking faults, and w is the distance of cross-slips from {111} to {001} planes.
Obviously, the cross-slip of 1/2<110>{111} super-partial dislocations can take place only if . A large means that γ′ phases have a higher driving force of 1/2<110>{111} super-partial dislocations from {111} to {001} planes. In this case, some K-W locks [16] are easy to be formed with the help of APBs on {001} planes. To this end, we employ to evaluate the influence of single X-addition on the yield strength of γ′ phases at high temperature. The calculated results are tabulated in Table 1. From Table 1, one can see that in the perfect L12-Ni3Al crystal indeed complies with the condition of cross-slips of 1/2<110>{111} super- partial dislocations as reported in literatures [17]. As a part of Al atoms in γ′-Ni3Al(X) phases are substituted by Re, W and Mo, values are found to increase by 0.18, 0.16 and 0.09, respectively, while only a small rise can be seen in the case of X=Ta and Ti, e.g., 0.05 in the TaAl model and 0.03 in the TiAl mode. These results clearly indicate that Re- and W-additions can remarkably promote the cross-slip of 1/2<110>{111} super- partial dislocations, but Ta- and Ti-additions are almost invalid. As for the advantage of Suzuki segregations, a careful comparison reveals that either associated with anomalous yield strength of γ′ phases at high temperature or τmax relevant to resistances to plastic deformations of γ′ phases in the W-addition model is almost equal to that in the Re-addition model. For example, for the substitution of W for Al in γ′-Ni3Al(X) phases, Table 1 shows that τmax (=6.47 GPa) in the slip direction is very close to that (=6.62 GPa) in the single Re-addition model. These results seem to imply that W-addition indeed has a similar influence to Re-addition on the creep of Ni-based SC superalloys at high temperature [9].
Table 1 Formation enthalpies of point defects H, correlation energies between X1Al and X2Al defects, ideal shear strengths τmax, anti-phase boundary energies γAPB, complex stacking fault energies γCSF, unstable stacking fault energies γusf and in γ′-Ni3Al(X) phases with X=Re, W, Mo, Ta and Ti
3.2 Comparison of strengthening effects caused by W-addition with Re-addition
As it is well-known, Re-addition induced reinforcement of creep resistances in Ni-based SC superalloys is called as Re-effect [4]. Re not only may reduce stacking fault energies of γ phases and raise of γ′ phases, but also can slow down coarsening kinetics of γ′ precipitates [39]. Since almost same creep properties have been observed in CMSX-4 superalloys with partial substitution of W for Re [6], a multiple addition of Re and W in γ′ phases is further investigated. In these complexes of X1Al+X2Al defects, only two typical models and with preferred substitution of X1 and X2 for Al atoms are calculated. The calculated results are also listed in Table 1. Herein, X1 and X2 represent the species of alloying elements. d=2nd and d=4th are the distances between X1Al and X2Al point defects, which correspond to the second and fourth nearest neighbors of assigned sites (Fig. 2(a)), respectively. From Fig. 2(a), one can see that d=2nd denotes that X2Al locates at an adjacent plane of the assigned (111) slip plane, while d=4th means that X2Al situates at the same (111) slip planes as X1Al. The former indicates that only Suzuki segregation of X1 exists, but the latter means that co-segregation of X1 and X2 appears in these stacking faults. Corresponding to XAl and X1Al+X2Al, the contents of solutes in the shear models are 4.17 and 8.33 at.%, while they are 1.04 and 2.08 at.% in the calculation models for Γ-surfaces, respectively. Relative to the single Re-addition, Table 1 shows that in and models rises by 7% and 20%, respectively, and τmax in the slip direction increases by 0.28 and 1.01 GPa, respectively. Obviously, an extra Re-addition is conducive to yield strengths and creep rupture strengths of γ′ phases at high temperature [8], especially in the Suzuki segregation of Re with high concentration. As X2 is replaced by W, it is found that both of γusf in and slip directions are large relative to their corresponding double Re-addition models, which means that a partial replacement of W for Re makes the emission of 1/2<110>{111} super-partial dislocations and the nucleation of 1/6<112>{111} Shockley partial dislocations more difficult [18], and the inhibition caused by W-segregation on the (111) slip plane is stronger than W-addition on its adjacent plane, e.g., 57 mJ/m2 in the model larger than that in the model, corresponding to the emission of 1/2<110>{111} super-partial dislocations. Moreover, an upraised γCSF in the complex of ReAl+WAl indicates that the substitution of Re by W also facilitates the constriction of 1/2<110>{111} super-partial dislocations by two 1/6<112>{111} Shockley partial dislocations [14]. Additionally, relative to the double Re-addition with d=2nd and d=4th, τmax in the slip direction increases by 0.46 and 0.07 GPa, respectively, which means that both of replacements of W for Re on the (111) slip plane and its adjacent plane can significantly impede the movement of 1/6<112>{111} Shockley partial dislocations, and its resistance to dislocation slip mediated creeps of γ′ phases seems to be large relative to double Re-additions. But, it is noticed that in and models drops by 4% and 2% relative to and models, respectively. From the viewpoint of cross-slips of 1/2<110>{111} super-partial dislocations, this reduced undoubtedly indicates that the anomalous flow behavior of γ′ phases at high temperature in ReAl+WAl complexes is not as excellent as that of the double Re-addition.
As X1 on the (111) slip plane is also replaced by W, Table 1 shows although most of and τmax in the slip direction are lower than those in ReAl+X2Al complexes, their decrements are found to be very small. For example, relative to the model, only 0.01 GPa is cut down for τmax, and the lost is less than 1% in the model. Moreover, a similar variation can also be seen as X2 departs from the (111) slip plane. For example, τmax (=7.37 GPa) in the model is very close to that (7.36 GPa) in the model, and their corresponding difference in is not more than 0.06. These results clearly indicate that W-addition indeed has a similar strengthening effect to Re-addition on the dislocation slip mediated creep of γ′ phases, especially in the co-segregation of W and Mo. Interestingly, for the complex of WAl+MoAl, it is found that either =2.22 at d=2nd or =2.33 at d=4th is higher than that in the model (1.78) and that in the model (1.94). This result further indicates that an interplay between X1 and X2 has a more critical impact than their species on the anomalous flow behavior of γ′ phases.
To investigate the interplay between X1 and X2 in dislocation slip mediated creeps of γ′ phases, a correlation energy function has been adopted to characterize and assess the interaction between X1Al and X2Al point defects (Table 1). Herein, is a difference of formation enthalpies of point defects, which can be calculated by the following expression [40]:
(3)
where and are the formation enthalpies of L12-Ni3Al(X) crystals per atom, corresponding to X1Al, X2Al and models, respectively. Table 1 shows that almost all in models are positive, e.g., 0.085 eV in the model and eV in the model, which means that most of interactions between X1Al and X2Al point defects are repulsive forces. However, it is noticed that a negative-0.058 eV exists in the model, indicating that the interaction between WAl and MoAl point defects is attractive. As compared with 0.095 eV in the model, this negative interaction seems to imply that an attraction should be responsible for a large in the model relative to the model. To test and verify this conjecture, in the complexes of MoAl+TaAl, MoAl+TiAl and TaAl+TiAl as well as their and τmax are also calculated and listed in Table 1. From Table 1, one can see that relative to and models, indeed increases in the model with negative . Also, in model with -0.080 eV rises by 0.03 and 0.06 eV, respectively, compared with and models with positive . As for the influence of magnitudes of Fig. 4 further illustrates the variation of and τmax versus For d=2nd, one can see that with the increase of from -0.039 to 0.190 eV, both of and τmax in the slip direction ascend firstly, and then gradually fall down, and the transformation takes place at 0.050 eV. In the case of d=4th, a similar variation of and τmax versus can be seen with the increase of from -0.090 to 0.119 eV. Also, the largest and τmax emerge at 0.050 eV, although their drop is more abrupt after the maximum. Similar to the influence of Re-P pairs on the Griffith work of γ-Ni/γ′-Ni3Al interfaces [41], these results distinctly indicate that a weak interaction between X1Al and X2Al defects is more profitable for the improvement of creep strengths of γ′ phases at high temperature, and the smaller the magnitude of is, the larger the creep rupture strength of γ′-Ni3Al phases is. That is said, the anomalous flow behavior of γ′ phases at high temperature cannot benefit from a strong interaction between X1Al and X2Al defects regardless of attraction or repulsion. Thus, relative to the species of X1 and X2 and their defective configurations in γ′ phases, provides a simple and direct criterion for the estimation of yield strengths and creep rupture strengths of γ′ phases at high temperature to some extent.
Fig. 4 Dependence of (a) and τmax in slip direction (b) on in complex of X1Al and X2Al
4 Conclusions
(1) Similar to Re-addition, the Suzuki segregation of W at {111} stacking faults not only can impede the movement of 1/6<112>{111} Shockley partial dislocations, but also may promote the cross-slip of 1/2<110>{111} super-partial dislocations.
(2) With the partial replacement of W for Re, an increased τmax along the slip direction in the duplex addition model of Re and W suggests that the resistance to creep of γ′ phases can be reinforced, although their associated with the anomalous flow behavior of γ′ phases drops slightly.
(3) The anomalous flow behavior of γ′ phases at high temperature can benefit from the co-segregation of Re and W in {111} stacking faults, but a strong attraction and repulsion between X1Al and X2Al point defects are disadvantageous for the improvement of creep rupture strengths of Ni-based single crystal superalloys.
Acknowledgments
The authors are grateful for the financial supports from the National Natural Science Foundation of China (Nos. 51871096, 52071136 ).
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易 洲,胥云雷,彭 平,陈江华
湖南大学 材料科学与工程学院,长沙 410082
摘 要:γ′-Ni3Al相在高温下的反常流变行为与1/2<110>{111}超级部分位错的交滑移密切相关。沿最低能量路径获得的广义堆垛层错能曲线(即Γ面)可以提供大量有关位错形核和运动的信息。采用第一性原理计算,研究Re、W、Mo、Ta、Ti单掺杂与双掺杂对γ′-Ni3Al相Γ面和理想剪切强度τmax 的影响。与Re掺杂的情形类似,W在堆垛层错处的Suzuki偏聚可阻止1/6<112>{111} Shockley部分位错的运动和促进1/2<110>{111}超级部分位错的交滑移。当Re被W部分取代时,的降低表明γ′相在高温下的反常流变行为不如双Re掺杂,但τmax的增加却表明镍基单晶高温合金的蠕变断裂强度在一定程度上可从中受益,尤其是Re和W在Al-Al位的共偏聚。当点缺陷X1Al和X2Al之间的相互作用采用关联能函数来表征时,无论是吸引还是排斥,强关联都不利于γ′相屈服强度的提高。
关键词:镍基单晶高温合金;γ′-Ni3Al;广义堆垛层错能;理想剪切强度;位错;交滑移
(Edited by Bing YANG)
Corresponding author: Ping PENG, Tel: +86-731-88821727, E-mail: ppeng@hnu.edu.cn
DOI: 10.1016/S1003-6326(21)65634-0
1003-6326/ 2021 The Nonferrous Metals Society of China. Published by Elsevier Ltd & Science Press