电磁感应辅助等离子体熔炼去除金属硅中的硼
来源期刊：中国有色金属学报2012年第12期
论文作者：蔡 靖 卢成浩 李锦堂 马文会 罗学涛
文章页码：3529 - 3534
关键词：太阳能级多晶硅；电磁感应；等离子体熔炼；除硼
Key words：solar grade polycrystalline silicon; electromagnetic induction; plasma melting; boron removal
摘 要：采用自主设计的转移弧等离子体发生装置，对金属硅进行电磁感应加热辅助等离子体熔炼除硼的研究；探索不同工艺条件如反应气体、熔炼时间和初始硼含量对除硼效果和硅损失的影响。结果表明：采用氩气和水蒸气混合气体(Ar+H2O)作为反应气体比氩气和氧气混合气体(Ar+O2)具有更好的除硼效果；随H2O含量的增加，硼的去除率与硅损失率都呈线性增加；采用Ar+1.5%H2O(体积分数)等离子体时，硼的去除率在30 min后达到最大值，其含量从22×10-6降至0.2×10-6(质量分数)，硅损失率约为0.5%/min；初始硼含量对除硼效果和硅损失率基本无影响。
Abstract: The removal of boron from metallurgical silicon was studied by plasma melting using electromagnetic induction heating with the independently designed transfer arc plasma generator. The effects of boron removal and silicon loss were investigated under different technological conditions of reacting gas, melting time and initial boron content. The results show that a mixture of argon and water vapor (Ar+H2O) as reaction gas is more effective for the boron removal than a mixture of argon and oxygen (Ar+O2), and both the boron elimination rate and silicon loss rate increase with the H2O content increasing; the boron elimination rate increases to the maximum by using Ar+1.5%H2O(volume fraction) plasma for 30 min, and the boron content is reduced from 22×10-6 to 0.2×10-6 (mass fraction), the silicon loss rate is about 0.5%/min, the initial boron content has no effects on the boron removal rate and silicon loss rate.
蔡 靖1，卢成浩1，李锦堂1，马文会2，罗学涛1
(1. 厦门大学 材料学院，厦门 361005；
2. 昆明理工大学 真空冶金国家工程实验室，昆明 650093)
摘 要：采用自主设计的转移弧等离子体发生装置，对金属硅进行电磁感应加热辅助等离子体熔炼除硼的研究；探索不同工艺条件如反应气体、熔炼时间和初始硼含量对除硼效果和硅损失的影响。结果表明：采用氩气和水蒸气混合气体(Ar+H2O)作为反应气体比氩气和氧气混合气体(Ar+O2)具有更好的除硼效果；随H2O含量的增加，硼的去除率与硅损失率都呈线性增加；采用Ar+1.5%H2O(体积分数)等离子体时，硼的去除率在30 min后达到最大值，其含量从22×10-6降至0.2×10-6(质量分数)，硅损失率约为0.5%/min；初始硼含量对除硼效果和硅损失率基本无影响。
关键词：太阳能级多晶硅；电磁感应；等离子体熔炼；除硼
CAI Jing1, LU Cheng-hao1, LI Jin-tang1, MA Wen-hui 2, LUO Xue-tao1
(1. College of Materials, Xiamen University, Xiamen 361005, China;
2. National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology,
Kunming 650093, C)
Abstract:The removal of boron from metallurgical silicon was studied by plasma melting using electromagnetic induction heating with the independently designed transfer arc plasma generator. The effects of boron removal and silicon loss were investigated under different technological conditions of reacting gas, melting time and initial boron content. The results show that a mixture of argon and water vapor (Ar+H2O) as reaction gas is more effective for the boron removal than a mixture of argon and oxygen (Ar+O2), and both the boron elimination rate and silicon loss rate increase with the H2O content increasing; the boron elimination rate increases to the maximum by using Ar+1.5%H2O(volume fraction) plasma for 30 min, and the boron content is reduced from 22×10-6 to 0.2×10-6 (mass fraction), the silicon loss rate is about 0.5%/min, the initial boron content has no effects on the boron removal rate and silicon loss rate.
Key words:solar grade polycrystalline silicon; electromagnetic induction; plasma melting; boron removal
