Electric transport mechanism and magnetoresistance of La0.80Sr0.15Ag0.05MnO3/x（CuO）
来源期刊：Rare Metals2015年第5期
论文作者：Peng Liu Gui-Ying Wang Qiang Mao Ning Liu Zhen-Sheng Peng
文章页码：329 - 333
摘 要：The samples of La0.80Sr0.15Ag0.05 Mn O3/x（Cu O）（x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the samples was detected by X-ray diffraction（XRD）, scanning electron microscope（SEM） equipped with energy dispersive spectroscopy（EDS）, electric transport mechanism, and magnetoresistance enhancement, and the temperature stability of magnetoresistance of the samples was studied through resistivity–temperature（q-T） curves, q-T fitted curves, and magnetoresistance–temperature（MR-T） curves.The results indicate that q-T data can be fitted by the formula q = q0 AT2 very well, and the electric transport mechanism of all the samples in metal-like area is the scattering of single magneton upon spin electron; the magnetoresistance of composite samples is far larger than that of the original material, and the MR peak value of the sample with x = 0.20 is nearly 4 times as large as that of the sample with x = 0; composite samples have comparatively good temperature stability of magnetoresistance in the temperature range of 200–260 K, and the magnetoresistance of the sample with x = 0.15 almost does not change with temperature and keeps at（5.03 ± 0.20） % in the temperature range of 210–260 K.
Peng Liu1,2，Gui-Ying Wang1,2，Qiang Mao1,2，Ning Liu3，Zhen-Sheng Peng1
1. Anhui Key Laboratory of Spintronic and Nano-metric Materials2. School of Mechanics of Electronic Engineering, Suzhou University3. School of Electrical Engineering, Anhui Engineering University
摘 要：The samples of La0.80Sr0.15Ag0.05 Mn O3/x（Cu O）（x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the samples was detected by X-ray diffraction（XRD）, scanning electron microscope（SEM） equipped with energy dispersive spectroscopy（EDS）, electric transport mechanism, and magnetoresistance enhancement, and the temperature stability of magnetoresistance of the samples was studied through resistivity–temperature（q-T） curves, q-T fitted curves, and magnetoresistance–temperature（MR-T） curves.The results indicate that q-T data can be fitted by the formula q = q0 AT2 very well, and the electric transport mechanism of all the samples in metal-like area is the scattering of single magneton upon spin electron; the magnetoresistance of composite samples is far larger than that of the original material, and the MR peak value of the sample with x = 0.20 is nearly 4 times as large as that of the sample with x = 0; composite samples have comparatively good temperature stability of magnetoresistance in the temperature range of 200–260 K, and the magnetoresistance of the sample with x = 0.15 almost does not change with temperature and keeps at（5.03 ± 0.20） % in the temperature range of 210–260 K.
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