Synthesis of GaN films on porous silicon substrates
来源期刊：Rare Metals2006年第1期
论文作者：DONG Zhihua, XUE Chengshan, ZHUANG Huizhao, GAO Haiyong, TIAN Deheng, and WU Yuxin Institute of Semiconductors, Shandong Normal University, Jinan , China
文章页码：96 - 98
摘 要：<正>A novel and simple method was employed to synthesize GaN films on porous silicon （PS） substrates. GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction （XRD） to identify crystalline structure. Fourier transmit infrared （FTIR） spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy （SEM） and were found to consist of many big crystal grains. Photoluminescence （PL） spectrum was used to illuminate the optical property of the GaN films.
DONG Zhihua, XUE Chengshan, ZHUANG Huizhao, GAO Haiyong, TIAN Deheng, and WU Yuxin Institute of Semiconductors, Shandong Normal University, Jinan 250014, China
摘 要：<正>A novel and simple method was employed to synthesize GaN films on porous silicon （PS） substrates. GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction （XRD） to identify crystalline structure. Fourier transmit infrared （FTIR） spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy （SEM） and were found to consist of many big crystal grains. Photoluminescence （PL） spectrum was used to illuminate the optical property of the GaN films.
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