Beryllium Surface Modified by B Ion Implantation
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG1989年第3期
论文作者：胡仁元 杨玉石
文章页码：161 - 163
摘 要：<正> Beryllium is implanted with 100 keV,2×1017 B/cm2 and post-implanted sample isannealed at 650℃ for 1 h.Hardness measurementindicates that the hardness increases withimplantation and can further be modified bypost-implantation heat treatment.Profile measurement shows that implantationcauses contamination on the surface of beryllium.During annealing boron diffuses out of berylliumand carbon on surface diffuses into beryllium.Beryllium surface is modified by compositionchange and carbide formation.
胡仁元，杨玉石
摘 要：<正> Beryllium is implanted with 100 keV,2×1017 B/cm2 and post-implanted sample isannealed at 650℃ for 1 h.Hardness measurementindicates that the hardness increases withimplantation and can further be modified bypost-implantation heat treatment.Profile measurement shows that implantationcauses contamination on the surface of beryllium.During annealing boron diffuses out of berylliumand carbon on surface diffuses into beryllium.Beryllium surface is modified by compositionchange and carbide formation.
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