OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING
来源期刊：Acta Metallurgica Sinica2005年第3期
论文作者：D.Chen B.W.Wang H.Shen H.Q. Wang D.C. Ba L.S.Wen
Key words：optical characterization; TiO2 thin film; DC reactive magnetron sputtering; n & k;
Abstract: TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.
D.Chen1，B.W.Wang2，H.Shen3，H.Q. Wang4，D.C. Ba5，L.S.Wen6
(1.Material and Science Engineering Academy, South China University of Technology, Guangzhou 510641,China;
2.Guangzhou Institude of Energy Conversion, Guangzhou 510070, China;
3.The School of Physics and Engineering, Zhongshan University, Guangzhou 510275, China;
4.School of Mechanism and Automobile, Shenyang Institute of Aeronautical Engineering, Shenyang 110034,China;
5.Mechanism and Aeronautical College, Northeastern University, Shenyang 110004, China;
6.Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016, China)
Abstract:TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.
Key words:optical characterization; TiO2 thin film; DC reactive magnetron sputtering; n & k;
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