简介概要

STRUCTURE AND SURFACE STUDIES OF MgxZn1-xO FILMS GROWN BY PULSED LASER DEPOSITION

来源期刊:Acta Metallurgica Sinica2005年第3期

论文作者:K.H. Wong L. Zhuang

Key words:pulsed laser deposition; thin film; XRD; MgxZn1-xO;

Abstract: The structural and surface properties of high-quality epitaxial cubic MgxZn1 -xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffraction and atomic force microscopy respectively. For films of about 500nm thick, scans over a 30μm × 30μm area revealed a surface roughness Rα of about 100nm. This relatively large surface roughness is primarily attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO) (100) substrates, however has been obtained for composition x = 0.9, 0.7 and0.5 with the heteroepitaxial relationship of (100)MgxZn1-xO∥(100)LAO (out-of-plane) and (011 ) MgxZn1-xO∥ (010)LAO (in-plane). These structural qualities suggest that cubic MgxZn1-xO alloys films have good potential in a variety of optoelectronic device applications.

详情信息展示

STRUCTURE AND SURFACE STUDIES OF MgxZn1-xO FILMS GROWN BY PULSED LASER DEPOSITION

K.H. Wong1,L. Zhuang1

(1.Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China)

Abstract:The structural and surface properties of high-quality epitaxial cubic MgxZn1 -xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffraction and atomic force microscopy respectively. For films of about 500nm thick, scans over a 30μm × 30μm area revealed a surface roughness Rα of about 100nm. This relatively large surface roughness is primarily attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO) (100) substrates, however has been obtained for composition x = 0.9, 0.7 and0.5 with the heteroepitaxial relationship of (100)MgxZn1-xO∥(100)LAO (out-of-plane) and (011 ) MgxZn1-xO∥ (010)LAO (in-plane). These structural qualities suggest that cubic MgxZn1-xO alloys films have good potential in a variety of optoelectronic device applications.

Key words:pulsed laser deposition; thin film; XRD; MgxZn1-xO;

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