Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO/Ga2O3①
来源期刊：中南大学学报(英文版)2005年第1期
论文作者：庄惠照 高海永 薛成山 董志华 何建廷 刘亦安 吴玉新 田德恒
文章页码：9 - 12
Key words：fabrication; Ga2O3 film; ZnO buffer layer; radio frequency magnetron sputtering; nitriding
Abstract: A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hex-agonal wurtzite structure were fabricated on Si(111) substrates with ZnO buffer layers through nitriding Ga2O3 films in the tube quartz furnace. ZnO buffer layers and Ga2O3films were deposited on Si substrates in turn by using radio frequncy magnetron sputtering system before the nitriding process. The structure and composition of GaN films were studied by X-ray diffraction,selected area electron diffraction and Fourier transform infrared spectrophotometer. The morphologies of GaN films were studied by scanning electron microscopy. The results show that ZnO buffer layer improves the crystalline quality and the surface morphology of the films relative to the films grown directly on silicon substrates. The measurement result of room-temperature photoluminescence spectrum indicates that the photoluminescence peaks locate at 365 nm and 422 nm.
