High temperature creep behavior of in-situ synthesized MoSi₂-30%SiC composite

来源期刊：中国有色金属学报(英文版)2002年第4期

论文作者：傅晓伟 杨王玥 孙祖庆 张来启 朱静

文章页码：686 - 690

Key words：SiC/MoSi₂ composite; in-situ synthesis; creep; dislocation

Abstract: The compressive creep behavior at 1200～1400℃ of an in-situ synthesized MoSi₂-30%SiC (volume fraction) composite and a traditional PM MoSi₂-30%SiC (volume fraction) composite is investigated. The creep rate of the in-situ synthesized MoSi₂-30%SiC (volume fraction) composite is about 10^-7s^-1 under stress of 60～120MPa, and significantly lower than that made by PM method above 1300℃. The reason is that the interface between SiC particle and MoSi₂ matrix in in-situ synthesized SiC_p/MoSi₂ is of direct atomic bonding without any amorphous glassy phase, such as SiO₂ structure. Creep deformation occurs primarily by dislocation motion and the dislocations have Burgers vectors of the type of 〈110〉 and 〈100〉.