热处理对硅片抗弯强度的影响

来源期刊：中国有色金属学报1997年第1期

论文作者：谢书银 石志仪 李冀东 董萍

文章页码：169 - 171

关键词：硅 抗弯强度 热处理

Key words：silicon flexure strength heat treatment

摘    要：研究了热处理温度、时间及降温方式对不同氧、氮含量的氩气氛直拉硅(ACZ)及氮气氛直拉硅(NCZ)抗弯强度(σ)的影响规律。结果表面：硅氧络合物和氮硅氧络合物的生成使抗弯强度提高，沉淀的形成使强度下降。提出了既能消除热施主、又可避免强度降低的650℃热处理两段冷新工艺。

Abstract: The effects of heat treatment temperature, time and cooling way on the flexure strength of ACZ and NCZ silicon wafers with various contents of oxygen and nitrogen were studied. The strength of silicon wafer was increased by the formation of silicon-oxygen and nitrogen-silicon-oxygen complexes and was decreased by the formation of silicon-oxygen and nitrogen-silicon-oxygen precipitates. A new two step cooling technique eliminating heat donor and preventing the decrease of strength was suggested.