FERROELECTRIC CHARACTERISTICS OF SrBi2Ta2O9 THIN FILMS ANNEALED IN FORMING GAS
来源期刊：Acta Metallurgica Sinica2001年第6期
论文作者：A.D.Li N.B.Ming D.S.Wang Z.G.Liu D.Wu T.Yu A.Hu
Key words：ferroelectric; SrBi2 Ta2 O9 thin film; forming gas annealing;
Abstract: The degradation behavior of SrBi2 Ta2O9 (SBT) thin filras annealed in forming gas (5%H2+95%N2) was investigated. The ferroelectric remnant polarization Pr of SBT had a severe decrease in the containing H2 atmosphere at 400℃. SEM results showed that Bi could be reduced from SBT thin films for the effect of H2. The reduction role increased with a rise of annealing temperature. SBT thin films lost their ferroeb ctric- ity when the annealing temperature was above 450℃. It implied that the degradation of Pr value or the disappearance of ferroelectricity in SBT thin films had the relationship with the reductive amounts of Bi in SBT. H2 played an important role in degradation of ferroelectric SBT thin films. This role could be attributed to its strong reduction activity during forming gas annealing.
A.D.Li1，N.B.Ming1，D.S.Wang2，Z.G.Liu1，D.Wu1，T.Yu2，A.Hu2
(1.Department of Material Science and Engineering & National Laboratory of Solid State Microstructures. Nanjing University, Nanjing 210093, China;
2.Department of Physics & National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China)
Abstract:The degradation behavior of SrBi2 Ta2O9 (SBT) thin filras annealed in forming gas (5%H2+95%N2) was investigated. The ferroelectric remnant polarization Pr of SBT had a severe decrease in the containing H2 atmosphere at 400℃. SEM results showed that Bi could be reduced from SBT thin films for the effect of H2. The reduction role increased with a rise of annealing temperature. SBT thin films lost their ferroeb ctric- ity when the annealing temperature was above 450℃. It implied that the degradation of Pr value or the disappearance of ferroelectricity in SBT thin films had the relationship with the reductive amounts of Bi in SBT. H2 played an important role in degradation of ferroelectric SBT thin films. This role could be attributed to its strong reduction activity during forming gas annealing.
Key words:ferroelectric; SrBi2 Ta2 O9 thin film; forming gas annealing;
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