Al-Si-Mg (356)合金不稳态水平凝固过程中的显微组织演化

来源期刊:中国有色金属学报(英文版)2018年第6期

论文作者:J. O. LIMA C. R. BARBOSA I. A. B. MAGNO J. M. NASCIMENTO A. S. BARROS M. C. OLIVEIRA F. A. SOUZA O. L. ROCHA

文章页码:1073 - 1083

关键词:Al-Si-Mg合金;显微组织演化;枝晶间距; 瞬时热流

Key words:Al-Si-Mg alloy; microstructural transition; dendrite arm spacing; transient heat flow

摘    要:汽车和航空航天工业对减少运载工具重量的需求不断增加,这就需要发展改良的结构铝基合金。因此,本文作者研究设计Al-7%Si-0.3%Mg 合金的水平凝固实验。研制并使用水冷式水平定向凝固装置。运用金相、光学显微镜、扫描电镜等传统技术表征材料的显微组织。用Thermo-Calc软件模拟含0.17% Fe(质量分数)合金的凝固路径。研究生长速度(VL)、冷却速度(TC)和凝固局部时间(tSL)等热力学参数对显微组织形成和枝晶显微组织演化的影响。当VL 和TC 值分别为0.82~0.98 mm/s 和1.71~2.55 °C/s时,柱状晶向等轴晶转变(CET)。通过测量一次和二次枝晶间距(分别为λ1和λ2)对显微组织进行表征。提出实验性定律:λ1,2=f(VL, TC),λ2=f(tSL);并观察到枝晶区包含以下共晶混合物:α(Al)+Si+π-Al8Mg3FeSi6+θ-Mg2Si。

Abstract: The increasing demand for reducing vehicle weight in the automotive and aerospace industries has raised the need to develop improved structural aluminum-based alloys. Thus, horizontal solidification experiment with the Al-7%Si-0.3%Mg (mass fraction) alloy was carried out. A water-cooled horizontal directional solidification device was developed and used. Microstructural characterization was carried out using traditional techniques of metallography, optical microscopy and SEM microscopy. The Thermo-Calc software was used to generate the solidification path of the investigated alloy with addition of 0.17% Fe (mass fraction). The effects of the thermal parameters such as the growth rate (VL), cooling rate (TC) and solidification local time (tSL) on the formation of the macrostructure and on the dendritic microstructure evolution were evaluated. A columnar to equiaxed transition (CET) was found for VL and TC values from 0.82 to 0.98 mm/s and from 1.71 to 2.55 °C/s, respectively. The microstructure was characterized by the measurement of the primary and secondary dendrite arm spacings (λ1 and λ2, respectively). Experimental laws of λ1 =f(VL, TC) and λ2 =f(tSL) were proposed. It is observed that the interdendritic region is composed of the following eutectic mixture: a(Al)+Si+p-Al8Mg3FeSi6+q-Mg2Si.

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