Ti/Cu/Ti部分瞬间液相连接Si3N4的界面反应和连接强度
来源期刊：中国有色金属学报2001年第2期
论文作者：周飞 李志章
文章页码：273 - 278
关键词：部分瞬间液相连接； 氮化硅； 扩散路径；界面反应；连接强度
Key words：partial transient liquid phase bonding; silicon nitride; interface reaction; diffusion path; bonding strength
摘 要：用Ti/Cu/Ti多层中间层在1 273 K进行氮化硅陶瓷部分瞬间液相连接，实验考察了保温时间对连接强度的影响。用SEM EPMA和XRD对连接界面进行微观分析，并用扩散路径理论，研究了界面反应产物的形成过程。结果表明：在连接过程中，Cu与Ti相互扩散，形成Ti活度较高的液相，并与氮化硅发生反应，在界面形成Si3N4/TiN/Ti5Si3+Ti5Si4＋TiSi2/TiSi2＋Cu3Ti2(Si)/Cu的梯度层。保温时间主要是通过影响接头反应层厚度和残余热应力大小而影响接头的连接强度。
Abstract: The partial transient liquid phase(PTLP) bonding of silicon nitride was carried out at 1 273 K with Ti/Cu/Ti multi-interlayer. The effect of bonding time and interfacial reaction on the joint strength were investigated and the interfacial microstructures were observed and analyzed using SEM，EPMA and XRD respectively. The formation and transition processes of interface layer sequence at the interface were discussed by diffusion path. It is shown that Cu-Ti transient liquid alloy forms on the surface of silicon nitride and reacts with silicon nitride on the interface at 1 273 K，forming the Si3N4/TiN/Ti5Si3＋Ti5Si4＋TiSi2/TiSi2＋Cu3Ti2(Si)/Cu gradient interface. Owing to the variation of concentration in transient liquid，the diffusion path in the subsequent reaction changes. According to the microstructural analyses，the joint strength is affected by the thickness of reaction layer and the amount of residual thermal stresses which are affected by the bonding time.
