Effect of annealing on composition,structure and electrical properties of Au layers grown on different thickness Cr layers

Yan Huang;Hong Qiu;Liqing Pan;Yue Tian;Fengping Wang;Ping Wu Department of Physics, Applied Science School, University of Science and Technology Beijing, Beijing 100083, China

摘 要：<正> 110nm-thick Au layers were sputter-deposited on unheated glasses coated about a 10 nm-thick and a 50 nm-thick Cr layerrespectively. The Au/Cr bilayer films were annealed in a vacuum of 1 mPa at 300℃ for 2, 5 and 30 min, respectively. Auger electronspectroscopy, X-ray diffraction and Field emission scanning electron microscopy were used to analyze the composition and structureof the Au layers. The resistivity of the bilayer films was measured by using four-point probe technique. The adhesion of the bilayerfilms to the substrate was tested using tape tests. The amount of Cr atoms diffusing into the Au layer increases with increasing theannealing time, resulting in a decrease in lattice constant and an increase in resistivity of the Au layer. The content of Cr inside theAu layer grown on the thinner Cr layer is less than that grown on the thicker Cr layer. For the Au/Cr bilayer films, the lower resistiv-ity and the good adhesion to the glass substrate can be obtained at a shorter annealing time for a thin

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