Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD
来源期刊：International Journal of Minerals Metallurgy and Materials2013年第8期
论文作者：Jin-long Liu Cheng-ming Li Rui-hua Zhu Liang-xian Chen Jing-jing Wang Zhi-hong Feng
文章页码：802 - 807
摘 要：With the advantages of high deposition rate and large deposition area,polycrystalline diamond films prepared by direct current（DC） arc jet chemical vapor deposition（CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices.In this paper,high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD,and then,the p-type surface conductive layer with the sheet carrier density of 1011-1013 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min.Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode,respectively,afterwards,they were treated by rapid vacuum annealing at different temperatures.The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method（TLM）.Due to the formation of Ti-related carbide at high temperature,the specific contact resistance of Ti/Au contact gradually decreases to 9.95×10-5 Ω.cm 2 as the temperature increases to 820℃.However,when the annealing temperature reaches 850℃,the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au.As for the as-deposited Au contact,it shows an ohmic contact.After annealing treatment at 550℃,low specific contact resistance was detected for Au contact,which is derived from the enhancement of interdiffusion between Au and diamond films.
Jin-long Liu1，Cheng-ming Li1，Rui-hua Zhu1，Liang-xian Chen1，Jing-jing Wang2，Zhi-hong Feng2
1. School of Materials Science and Engineering,University of Science and Technology Beijing2. Science and Technology on ASIC Laboratory,Hebei Semiconductor Research Institute
摘 要：With the advantages of high deposition rate and large deposition area,polycrystalline diamond films prepared by direct current（DC） arc jet chemical vapor deposition（CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices.In this paper,high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD,and then,the p-type surface conductive layer with the sheet carrier density of 1011-1013 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min.Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode,respectively,afterwards,they were treated by rapid vacuum annealing at different temperatures.The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method（TLM）.Due to the formation of Ti-related carbide at high temperature,the specific contact resistance of Ti/Au contact gradually decreases to 9.95×10-5 Ω.cm 2 as the temperature increases to 820℃.However,when the annealing temperature reaches 850℃,the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au.As for the as-deposited Au contact,it shows an ohmic contact.After annealing treatment at 550℃,low specific contact resistance was detected for Au contact,which is derived from the enhancement of interdiffusion between Au and diamond films.
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