Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate
来源期刊：JOURNAL OF RARE EARTHS2004年增刊第2期
论文作者：CAO Jianqing HUANG Wentao Xiong Xiaoyi Dou Weizhi Zhang Wei TSIEN Peihsin Liu Zhihong CHEN Changchun
Key words：strain relaxation; UHVCVD; ion implantation; SiGe;
Abstract: Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.
CAO Jianqing1，HUANG Wentao2，Xiong Xiaoyi2，Dou Weizhi2，Zhang Wei2，TSIEN Peihsin2，Liu Zhihong2，CHEN Changchun2
(1.Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China;
2.Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Abstract:Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.
Key words:strain relaxation; UHVCVD; ion implantation; SiGe;
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