Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography
来源期刊：JOURNAL OF RARE EARTHS2004年增刊第2期
论文作者：Wang Jing Ma Tongda HU Guangyong Tu Hailing
Key words：synchrotron radiation; double-crystal topography; tilt; strained relaxation;
Abstract: The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.
Wang Jing1，Ma Tongda1，HU Guangyong1，Tu Hailing1
(1.GRINM Semiconductor Materials Co. Ltd.,General Research Institute for Nonferrous Metals,Beijing 100088,China)
Abstract:The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.
Key words:synchrotron radiation; double-crystal topography; tilt; strained relaxation;
【全文内容正在添加中】
