微量元素、织构和位错对低压(16V)电容器用阳极箔比电容的影响

来源期刊：中南大学学报(自然科学版)1982年第1期

论文作者：张纬斌 韩德伟 王云辉 于锋 罗继民 谭雪成

文章页码：55 - 61

关键词：比电容； 微量元素； 电容器； 阳极箔； 表面织构； 位错蚀坑； 蚀坑密度； 低压； 三角形； 纯铝箔

摘    要：本文研究了含微量 Mg—Nd、Cd 的低压(16V)电容器阳极铝箔比电容。实验表明:成份位于一定范围的退火 Al-Mg-Nd 和 Al-Cd 合金箔,与纯铝箔相比,有较高的比电容。其原因在于微量元素提高了铝箔表面(100)织构的含量;同时,也增加了正方形蚀坑的晶粒数目,这些晶粒分布在三角形或其他形状蚀坑的晶粒之间,且各种蚀坑的形状、大小适宜,分布均匀。由此所组成的位错蚀坑密度愈大,低压用铝箔的比电容也愈高。

Abstract: The specific capacitance of aluminum foil anode containing small amount of Mg-Nd or Cd for low voltage(16v)electrolytic capacitor was studied.Experimental results showed that the specific capacitance of the annealed Al-Mg-Nd and Al-Cd alloy foil of proper composition increased as compared.with the specifc capacitance of pure aluminum foil The increase of the specific capacitance of the annealed alloy foil was due to the increase of the percentage of surface(100)texture.At the same time, the number of crystals with square dislocation pits also increased,and their distribution among those crystals with triangular(or other forms) dislocation pits would be uniform Thus the denser the dislocation pits formed in this way,the higher the specific capacitance would be.