简介概要

Deposition and Characterization of (Ba, Sr)RuO3 Oxide Electrode Using TMHD-Based Single Cocktail Source

来源期刊:JOURNAL OF RARE EARTHS2004年增刊第2期

论文作者:Kyung Il Hong Young Bae Kim Duck Kyun Choi Hyun Chul Kim

Key words:(Ba,Sr)RuO3; (Ba,Sr)TiO3; MOCVD; liquid delivery system(LDS); nozzle type injector;

Abstract: (Ba, Sr)RuO3 has been paid an attention as a promising electrode for (Ba, Sr)TiO3 dielectric material due to its similarity in structure and chemical composition with BST. In this study, (Ba, Sr)RuO3 conductive oxide film was deposited on a 4 inch p-type Si wafer by metal organic chemical vapor deposition (MOCVD) using single cocktail source for the practical device application. Ba(TMHD)2, Sr(TMHD)2, Ru(TMHD)3 precursors and solvent [1-EtylePiPerdine (C7H15 N) ] as starting materials were mixed together for single cocktail source. A liquid delivery system (LDS) and a vaporization cell were utilized for the delivery and vaporization of single cocktail source, respectively. The source feeding rate was controlled by a liquid mass flow controller (LMFC). Deposition parameters, such as the oxygen flow and the source flow rate,were sensitive to phase formation, resistivity and the composition ratio of (Ba, Sr)RuO3 films. Highly (110)-textured (Ba,Sr)RuO3 film was obtained vhen the Ar/O2 ratio was 200/140 sccm at a source flow rate of 0.05 sccm. The process window of stoichiometric composition of BSR film was observed with varying the source flow rate from 0.05 sccm to 0.1 sccm.

详情信息展示

Deposition and Characterization of (Ba, Sr)RuO3 Oxide Electrode Using TMHD-Based Single Cocktail Source

Kyung Il Hong1,Young Bae Kim1,Duck Kyun Choi1,Hyun Chul Kim1

(1.Department of Ceramic Engineering,Hanyang University,17 Haengdang-dong,Seongdong-ku,Seoul 133-791,Korea)

Abstract:(Ba, Sr)RuO3 has been paid an attention as a promising electrode for (Ba, Sr)TiO3 dielectric material due to its similarity in structure and chemical composition with BST. In this study, (Ba, Sr)RuO3 conductive oxide film was deposited on a 4 inch p-type Si wafer by metal organic chemical vapor deposition (MOCVD) using single cocktail source for the practical device application. Ba(TMHD)2, Sr(TMHD)2, Ru(TMHD)3 precursors and solvent [1-EtylePiPerdine (C7H15 N) ] as starting materials were mixed together for single cocktail source. A liquid delivery system (LDS) and a vaporization cell were utilized for the delivery and vaporization of single cocktail source, respectively. The source feeding rate was controlled by a liquid mass flow controller (LMFC). Deposition parameters, such as the oxygen flow and the source flow rate,were sensitive to phase formation, resistivity and the composition ratio of (Ba, Sr)RuO3 films. Highly (110)-textured (Ba,Sr)RuO3 film was obtained vhen the Ar/O2 ratio was 200/140 sccm at a source flow rate of 0.05 sccm. The process window of stoichiometric composition of BSR film was observed with varying the source flow rate from 0.05 sccm to 0.1 sccm.

Key words:(Ba,Sr)RuO3; (Ba,Sr)TiO3; MOCVD; liquid delivery system(LDS); nozzle type injector;

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