Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Li Lianbi Lu Gang Pu Hongbin Tan Changxing Chen Zhiming
Key words：SiCGe; SiC; buffer layer; hetero-junction; LPCVD;
Abstract: Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as the carrier gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction). It is shown that use of the 3C-SiC buffer layer is an effective way to improve the quality of the ternary alloy.
Li Lianbi1，Lu Gang1，Pu Hongbin1，Tan Changxing1，Chen Zhiming1
(1.Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China)
Abstract:Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as the carrier gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction). It is shown that use of the 3C-SiC buffer layer is an effective way to improve the quality of the ternary alloy.
Key words:SiCGe; SiC; buffer layer; hetero-junction; LPCVD;
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