精铟的化学清洗提纯

来源期刊：中国有色金属学报2009年第3期

论文作者：于丽敏 蒋文全 孙海峰 傅钟臻 夏雯 刘红 孙泽明

文章页码：589 - 594

关键词：精铟；化学清洗；甘油；碘化钾；氯化铵, refined indium; chemical purifying process; glycerin; potassium iodide; ammonium chloride

Key words：refined indium; chemical purifying process; glycerin; potassium iodide; ammonium chloride

摘    要：研究精铟的化学清洗提纯过程，提出甘油碘化钾熔炼及甘油氯化铵熔炼相联合进行化学提纯的方法。研究表明：该方法可将镉、铊等杂质含量降低到10^-6以下，并可直接得到表面光亮平整无杂色的铟电极，化学清洗提纯工艺简单易操作；甘油碘化钾熔炼提纯的最佳实验条件是质量比控制在m(KI):m(In)≥0.01，m(glycerin): m(In)≥0.3，搅拌时间控制在1 h；甘油氯化铵处理时氯化铵的用量应控制在 m(NH₄Cl):m(glycerin)=0.15。

Abstract: The chemical purifying process of refined indium was studied. In order to remove impurities Cd and Tl effectively, glycerin-KI and glycerin-NH₄Cl were used simultaneously to purify indium. The results show that through this method the contents of impurities Cd and Tl in indium can be reduced to less than 10^-6, thus refined indium anode with smooth and bright surface can be gained directly and easily. The best experimental conditions of glycerin-KI are m(KI):m(In)≥0.01, m(glycerin):m(In)≥0.3, and the stirring time should be controlled within 1 h. The ammonium chloride concentration should be controlled within m(NH₄Cl):m(glycerin)=0.15.

基金信息：国家科技支撑计划资助项目